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This article is cited in 7 scientific papers (total in 7 papers)
Selective-area growth of GaN nanowires on patterned SiO$_{x}$/Si substrates by molecular beam epitaxy
V. O. Gridchina, K. P. Kotlyara, R. R. Reznikb, L. N. Dvoretskayaa, A. V. Parfenevac, I. S. Mukhinab, G. E. Cirlinabcde a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Ioffe Institute, St. Petersburg
d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
e Saint Petersburg Electrotechnical University "LETI"
Abstract:
We present the results on the selective-area growth of GaN nanowires using a molecular beam epitaxy technique on patterned SiO$_{x}$/Si substrates without any seed layers. The patterned SiO$_{x}$/Si substrates were prepared by the simple microlens photolithography method. The influence of the substrate temperature on the morphological properties of GaN nanowires was investigated. The optimal growth parameters for the selective-area growth of GaN nanowires were experimentally determined.
Keywords:
GaN, nanowires, molecular beam epitaxy, morphological properties, selective-area growth, microsphere lithography.
Received: 13.07.2020 Revised: 27.07.2020 Accepted: 27.07.2020
Citation:
V. O. Gridchin, K. P. Kotlyar, R. R. Reznik, L. N. Dvoretskaya, A. V. Parfeneva, I. S. Mukhin, G. E. Cirlin, “Selective-area growth of GaN nanowires on patterned SiO$_{x}$/Si substrates by molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 32–35; Tech. Phys. Lett., 46:11 (2020), 1080–1083
Linking options:
https://www.mathnet.ru/eng/pjtf4951 https://www.mathnet.ru/eng/pjtf/v46/i21/p32
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