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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 8, Pages 47–50
DOI: https://doi.org/10.21883/PJTF.2021.08.50855.18715 (Mi pjtf6568) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Directional radiation from GaAs quantum dots in AlGaAs nanowires

R. R. Reznika, K. M. Morozova, I. L. Krestnikova, K. P. Kotlyarb, I. P. Sotnikovcde, L. Leandrof, N. Akopianf, G. E. Cirlinbcdeg

a Innolume GmbH, Dortmund, Germany
b Saint Petersburg State University
c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
d Ioffe Institute, St. Petersburg
e Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
f DTU Fotonik, Kongens Lyngby, Denmark
g St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (351 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2021.08.50855.18715
Abstract: We present the results on experimental studies of the directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon surface. It was shown that the radiation intensity from GaAs quantum dots in the direction of nanowires growth is 2 orders of magnitude higher than the intensity of radiation in the perpendicular direction.
Keywords: semiconductors, nanowires, quantum dots, molecular beam epitaxy, microphotoluminescence, directional radiation.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0791-2020-0003
Saint Petersburg State University 61520973
European Union Horizon 2020 722176 (INDEED)
Russian Science Foundation 18-72-10047
The synthesis of nanostructures was supported by the Ministry of Science and Higher Education of the Russian Federation (state task no. 0791-2020-0003). The investigations of structure properties of experimental samples were supported by St. Petersburg State University, research grant no. 61520973. The investigations of optical properties of experimental samples were supported by the European Union’s Horizon 2020 Research and Innovation Program under Marie Skłodowska-Curie Grant agreement no. 722176 (INDEED). The silicon substrates were prepared under the support of the Russian Science Foundation, project no. 18-72-10047.
Received: 18.01.2021
Revised: 27.01.2021
Accepted: 27.01.2021
English version:
Technical Physics Letters, 2021, Volume 47, Issue 5, Pages 405–408
DOI: https://doi.org/10.1134/S106378502104026X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. R. Reznik, K. M. Morozov, I. L. Krestnikov, K. P. Kotlyar, I. P. Sotnikov, L. Leandro, N. Akopian, G. E. Cirlin, “Directional radiation from GaAs quantum dots in AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 47–50; Tech. Phys. Lett., 47:5 (2021), 405–408
Citation in format AMSBIB
\Bibitem{RezMorKre21}
\by R.~R.~Reznik, K.~M.~Morozov, I.~L.~Krestnikov, K.~P.~Kotlyar, I.~P.~Sotnikov, L.~Leandro, N.~Akopian, G.~E.~Cirlin
\paper Directional radiation from GaAs quantum dots in AlGaAs nanowires
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 8
\pages 47--50
\mathnet{http://mi.mathnet.ru/pjtf6568}
\crossref{https://doi.org/10.21883/PJTF.2021.08.50855.18715}
\elib{https://elibrary.ru/item.asp?id=46333414}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 5
\pages 405--408
\crossref{https://doi.org/10.1134/S106378502104026X}
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