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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 9, Pages 785–788
DOI: https://doi.org/10.21883/FTP.2021.09.51295.25 (Mi phts4983) 		 
This article is cited in 3 scientific papers (total in 3 papers)

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Specific features of structural stresses in InGaN/GaN nanowires

I. P. Sotnikovabc, K. P. Kotlyarad, R. R. Reznike, V. O. Gridchinad, V. V. Lendyashovaab, A. V. Vershinina, V. V. Lysake, D. A. Kirilenkob, N. A. Bertb, G. E. Cirlinabc

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
d Saint Petersburg State University
e St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (392 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2021.09.51295.25
Abstract: An experimental study aimed at developing the method of the spontaneous synthesis of InGaN/GaN nanowires formed as radial heterostructures by molecular-beam epitaxy is reported. By means of electron microscopy, it is shown that a wedge-shaped crack can be formed at an In content $x$ = 0.4 and 0.04 in the core and shell, respectively. On the basis of the model of internal structural stresses, a formula is proposed to estimate the critical dimensions and composition for the formation of cracks in nanowires. Comparison of the estimates with the experimental morphology data shows good agreement between them.
Keywords: nanowires, molecular-beam epitaxy, axial heterostructures, stressed heterostructures, indium nitride, gallium nitride.
Funding agency Grant number
Russian Foundation for Basic Research 18-07-01364
19-32-90156
Ministry of Education and Science of the Russian Federation 0791-2020-0003
The study was supported by the Russian Foundation for Basic Research, project nos. 18-07-01364 and 19-32-90156, and the Ministry of Science and Higher Education of the Russian Federation, State assignment no. 0791-2020-0003.
Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021
English version:
Semiconductors, 2021, Volume 55, Issue 10, Pages 795–798
DOI: https://doi.org/10.1134/S1063782621090207
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. P. Sotnikov, K. P. Kotlyar, R. R. Reznik, V. O. Gridchin, V. V. Lendyashova, A. V. Vershinin, V. V. Lysak, D. A. Kirilenko, N. A. Bert, G. E. Cirlin, “Specific features of structural stresses in InGaN/GaN nanowires”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 785–788; Semiconductors, 55:10 (2021), 795–798
Citation in format AMSBIB
\Bibitem{SotKotRez21}
\by I.~P.~Sotnikov, K.~P.~Kotlyar, R.~R.~Reznik, V.~O.~Gridchin, V.~V.~Lendyashova, A.~V.~Vershinin, V.~V.~Lysak, D.~A.~Kirilenko, N.~A.~Bert, G.~E.~Cirlin
\paper Specific features of structural stresses in InGaN/GaN nanowires
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 9
\pages 785--788
\mathnet{http://mi.mathnet.ru/phts4983}
\crossref{https://doi.org/10.21883/FTP.2021.09.51295.25}
\elib{https://elibrary.ru/item.asp?id=46491085}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 10
\pages 795--798
\crossref{https://doi.org/10.1134/S1063782621090207}
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