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This article is cited in 15 scientific papers (total in 15 papers)
Semiconductor physics
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme
R. A. Khabibullina, N. V. Shchavruka, A. N. Klochkova, I. A. Glinskiya, N. V. Zenchenkoa, D. S. Ponomareva, P. P. Maltseva, A. A. Zaitsevb, F. I. Zubovc, A. E. Zhukovcd, G. E. Cirlincd, Zh. I. Alferovcd a Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
b National Research University of Electronic Technology
c Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
d Saint-Petersburg Scientific Center, Russian Academy of Sciences
Abstract:
The dependences of the electronic-level positions and transition oscillator strengths on an applied electric field are studied for a terahertz quantum-cascade laser (THz QCL) with the resonant-phonon depopulation scheme, based on a cascade consisting of three quantum wells. The electric-field strengths for two characteristic states of the THz QCL under study are calculated: (i) “parasitic” current flow in the structure when the lasing threshold has not yet been reached; (ii) the lasing threshold is reached. Heat-transfer processes in the THz QCL under study are simulated to determine the optimum supply and cooling conditions. The conditions of thermocompression bonding of the laser ridge stripe with an $n^+$-GaAs conductive substrate based on Au–Au are selected to produce a mechanically stronger contact with a higher thermal conductivity.
Received: 26.09.2016 Accepted: 03.10.2016
Citation:
R. A. Khabibullin, N. V. Shchavruk, A. N. Klochkov, I. A. Glinskiy, N. V. Zenchenko, D. S. Ponomarev, P. P. Maltsev, A. A. Zaitsev, F. I. Zubov, A. E. Zhukov, G. E. Cirlin, Zh. I. Alferov, “Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 540–546; Semiconductors, 51:4 (2017), 514–519
Linking options:
https://www.mathnet.ru/eng/phts6191 https://www.mathnet.ru/eng/phts/v51/i4/p540
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