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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 4, Page 475 (Mi phts5871)  
This article is cited in 4 scientific papers (total in 4 papers)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Transport in heterostructures

Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential

A. M. Mozharova, A. A. Vasilieva, A. D. Bolshakova, G. A. Sapunova, V. V. Fedorova, G. E. Cirlinabc, I. S. Mukhinab

a St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
b ITMO University, 197101 St. Petersburg, Russia
c Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103 St. Petersburg, Russia
Full-text PDF (23 kB) Citations (4)
Abstract: In this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN/GaN nanowire. It was experimentally shown that negative differential resistance effect can be obtained in the studied heterostructure. On the base of numerical calculation results the model describing negative differential resistance phenomenon was proposed. We assume this effect to be related with strong localization of current flow inside the nanowire and emergence of Gunn effect in this area.
English version:
Semiconductors, 2018, Volume 52, Issue 4, Pages 489–492
DOI: https://doi.org/10.1134/S1063782618040231
Bibliographic databases:
Document Type: Article
Language: English
Citation: A. M. Mozharov, A. A. Vasiliev, A. D. Bolshakov, G. A. Sapunov, V. V. Fedorov, G. E. Cirlin, I. S. Mukhin, “Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 475; Semiconductors, 52:4 (2018), 489–492
Citation in format AMSBIB
\Bibitem{MozVasBol18}
\by A.~M.~Mozharov, A.~A.~Vasiliev, A.~D.~Bolshakov, G.~A.~Sapunov, V.~V.~Fedorov, G.~E.~Cirlin, I.~S.~Mukhin
\paper Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 4
\pages 475
\mathnet{http://mi.mathnet.ru/phts5871}
\elib{https://elibrary.ru/item.asp?id=32740470}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 4
\pages 489--492
\crossref{https://doi.org/10.1134/S1063782618040231}
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  • https://www.mathnet.ru/eng/phts/v52/i4/p475
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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