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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12, Pages 1507–1511
DOI: https://doi.org/10.21883/FTP.2018.12.46766.8882 (Mi phts5669) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates

P. A. Alekseeva, M. S. Dunaevskiia, A. O. Mikhailova, S. P. Lebedevb, A. A. Lebedeva, I. V. Ilkivc, A. I. Khrebtovb, A. D. Bouravlevacd, G. E. Cirlinbcd

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
Full-text PDF (693 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2018.12.46766.8882
Abstract: The electrical properties of GaAs nanowires grown on a 6$H$-SiC (0001) substrate covered with graphene single layers and bilayers are studied. The nanowires are grown by molecular-beam epitaxy, with gold as a catalyst. The electrical properties are studied by measuring and analyzing the current–voltage characteristics of single nanowires vertically grown on a substrate. Numerical simulation of the experimental current–voltage curves revealed the presence of a $\sim$0.6-V-high Schottky barrier between the nanowires and graphene. The appearance of the barrier is due to the formation of excess arsenic at the nanowire/graphene interface.
Keywords: GaAs NWs, Nanowires (NWs), Hybrid Substrates, Excess Arsenic, Schottky Barrier.
Funding agency Grant number
Russian Foundation for Basic Research 16-32-60147 мол_а_дк
Ministry of Education and Science of the Russian Federation 16.2483.2017/4.6
16.9789.2017/БЧ
Received: 09.04.2018
Accepted: 17.04.2018
English version:
Semiconductors, 2018, Volume 52, Issue 12, Pages 1611–1615
DOI: https://doi.org/10.1134/S1063782618120047
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Alekseev, M. S. Dunaevskii, A. O. Mikhailov, S. P. Lebedev, A. A. Lebedev, I. V. Ilkiv, A. I. Khrebtov, A. D. Bouravlev, G. E. Cirlin, “Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1507–1511; Semiconductors, 52:12 (2018), 1611–1615
Citation in format AMSBIB
\Bibitem{AleDunMik18}
\by P.~A.~Alekseev, M.~S.~Dunaevskii, A.~O.~Mikhailov, S.~P.~Lebedev, A.~A.~Lebedev, I.~V.~Ilkiv, A.~I.~Khrebtov, A.~D.~Bouravlev, G.~E.~Cirlin
\paper Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 12
\pages 1507--1511
\mathnet{http://mi.mathnet.ru/phts5669}
\crossref{https://doi.org/10.21883/FTP.2018.12.46766.8882}
\elib{https://elibrary.ru/item.asp?id=36903643}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 12
\pages 1611--1615
\crossref{https://doi.org/10.1134/S1063782618120047}
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  • https://www.mathnet.ru/eng/phts/v52/i12/p1507
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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