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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 10, Pages 1395–1400
(Mi phts6345)
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This article is cited in 20 scientific papers (total in 20 papers)
Semiconductor physics
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
R. A. Khabibullina, N. V. Shchavruka, A. Yu. Pavlova, D. S. Ponomareva, K. N. Tomosha, R. R. Galieva, P. P. Maltseva, A. E. Zhukovbc, G. E. Cirlincb, F. I. Zubovc, Zh. I. Alferovbc a Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
b Saint-Petersburg Scientific Center, Russian Academy of Sciences
c Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
Abstract:
The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped $n^+$-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 $\mu$m wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl$_{3}$/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.
Received: 07.04.2016 Accepted: 12.04.2016
Citation:
R. A. Khabibullin, N. V. Shchavruk, A. Yu. Pavlov, D. S. Ponomarev, K. N. Tomosh, R. R. Galiev, P. P. Maltsev, A. E. Zhukov, G. E. Cirlin, F. I. Zubov, Zh. I. Alferov, “Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1395–1400; Semiconductors, 50:10 (2016), 1377–1382
Linking options:
https://www.mathnet.ru/eng/phts6345 https://www.mathnet.ru/eng/phts/v50/i10/p1395
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