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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, P. B. Demina, M. V. Dorokhin, M. N. Drozdov, D. A. Zdoroveishchev, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Kudrin, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, “Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer”, Fizika Tverdogo Tela, 63:9 (2021), 1245–1252   ; Phys. Solid State, 63:11 (2021), 1593–1600 |
| 2. |
V. P. Lesnikov, M. V. Ved, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, I. L. Kalentyeva, A. V. Kudrin, R. N. Kriukov, “Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type”, Fizika Tverdogo Tela, 63:7 (2021), 866–873 ; Phys. Solid State, 63:7 (2021), 1028–1035 |
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| 3. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, I. N. Antonov, “Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer”, Fizika Tverdogo Tela, 63:3 (2021), 346–355 ; Phys. Solid State, 63:3 (2021), 425–434 |
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| 4. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, A. V. Zdoroveyshchev, M. V. Dorokhin, Yu. A. Dudin, A. V. Kudrin, M. P. Temiryazeva, A. G. Temiryazev, S. A. Nikitov, A. V. Sadovnikov, “Effect of ion irradiation on the magnetic properties of CoPt films”, Fizika Tverdogo Tela, 63:3 (2021), 324–332 ; Phys. Solid State, 63:3 (2021), 386–394 |
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| 5. |
M. V. Dorokhin, B. N. Zvonkov, P. B. Demina, N. V. Dikareva, A. V. Zdoroveyshchev, A. V. Kudrin, O. V. Vikhrova, I. V. Samartsev, S. M. Nekorkin, “Methods for switching radiation polarization in GaAs laser diodes”, Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021), 1409–1414 ; Tech. Phys., 66:11 (2021), 1194–1199  |
| 6. |
Yu. A. Danilov, A. V. Alaferdov, O. V. Vikhrova, D. A. Zdoroveishchev, V. A. Koval'skii, R. N. Kriukov, Yu. M. Kuznetsov, V. P. Lesnikov, A. V. Nezhdanov, M. N. Drozdov, “Doping of carbon layers grown by the pulsed laser technique”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 637–643 ; Semiconductors, 55:8 (2021), 660–666 |
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2020 |
| 7. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin, A. V. Zdoroveyshchev, E. A. Larionova, V. A. Koval'skii, O. A. Soltanovich, “Diode heterostructures with a ferromagnetic (Ga, Mn)As layer”, Fizika Tverdogo Tela, 62:3 (2020), 373–380 ; Phys. Solid State, 62:3 (2020), 423–430 |
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| 8. |
A. V. Alaferdov, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, S. A. Moshkalev, “The use of films of multilayer graphene as coatings of light-emitting GaAs structures”, Optics and Spectroscopy, 128:3 (2020), 399–406 ; Optics and Spectroscopy, 128:3 (2020), 387–394 |
| 9. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, I. N. Antonov, “Pulsed laser irradiation of GaAs-based light-emitting structures”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1336–1343 ; Semiconductors, 54:12 (2020), 1598–1604 |
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| 10. |
M. V. Dorokhin, P. B. Demina, Yu. A. Danilov, O. V. Vikhrova, Yu. M. Kuznetsov, M. V. Ved, F. Iikawa, M. A. G. Balanta, “Time-resolved photoluminescence in heterostructures with InGaAs:Cr/GaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1139–1144 ; Semiconductors, 54:10 (2020), 1341–1346 |
| 11. |
Yu. A. Danilov, M. V. Ved, O. V. Vikhrova, N. V. Dikareva, M. N. Drozdov, B. N. Zvonkov, V. A. Koval'skii, R. N. Kriukov, A. V. Kudrin, V. P. Lesnikov, P. A. Yunin, A. M. Andreev, “Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 868–872 ; Semiconductors, 54:9 (2020), 1059–1063 |
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| 12. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, P. B. Demina, M. N. Drozdov, A. V. Zdoroveyshchev, R. N. Kriukov, A. V. Nezhdanov, I. N. Antonov, S. M. Plankina, M. P. Temiryazeva, “Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 801–806 ; Semiconductors, 54:8 (2020), 956–960 |
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2019 |
| 13. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, Yu. A. Dudin, A. V. Zdoroveyshchev, A. V. Kudrin, M. P. Temiryazeva, A. G. Temiryazev, S. A. Nikitov, A. V. Sadovnikov, “Modifying the magnetic properties of the CoPt alloy by ion irradiation”, Fizika Tverdogo Tela, 61:9 (2019), 1694–1699 ; Phys. Solid State, 61:9 (2019), 1646–1651 |
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| 14. |
A. V. Zdoroveyshchev, O. V. Vikhrova, P. B. Demina, M. V. Dorokhin, A. V. Kudrin, A. G. Temiryazev, M. P. Temiryazeva, “Micromagnetic and magneto-optical properties of ferromagnetic/heavy metal thin film structures”, Fizika Tverdogo Tela, 61:9 (2019), 1628–1633 ; Phys. Solid State, 61:9 (2019), 1577–1582 |
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| 15. |
A. G. Temiryazev, M. P. Temiryazeva, A. V. Zdoroveyshchev, O. V. Vikhrova, Yu. V. Nikulin, Yu. V. Khivintsev, S. A. Nikitov, “Formation of magnetic nanostructures using an atomic force microscope probe”, Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1807–1812 ; Tech. Phys., 64:11 (2019), 1716–1721 |
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| 16. |
S. M. Plankina, O. V. Vikhrova, B. N. Zvonkov, S. Yu. Zubkov, R. N. Kriukov, A. V. Nezhdanov, D. A. Pavlov, I. Yu. Pashen'kin, A. A. Sushkov, “On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1233–1236 ; Semiconductors, 53:9 (2019), 1207–1210 |
| 17. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, A. V. Kudrin, I. L. Kalentyeva, E. A. Larionova, V. A. Koval'skii, O. A. Soltanovich, “Studying magnetic diodes with a GaMnAs layer formed by pulsed laser deposition”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 351–358 ; Semiconductors, 53:3 (2019), 332–338 |
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2018 |
| 18. |
A. V. Kudrin, A. V. Zdoroveyshchev, O. V. Vikhrova, M. V. Dorokhin, I. L. Kalentyeva, P. B. Demina, “Detectors of circularly polarized radiation based on semiconductor heterostructures with a CoPt Schottky barrier”, Fizika Tverdogo Tela, 60:11 (2018), 2236–2239 ; Phys. Solid State, 60:11 (2018), 2276–2279 |
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| 19. |
A. G. Temiryazev, M. P. Temiryazeva, A. V. Zdoroveyshchev, O. V. Vikhrova, M. V. Dorokhin, P. B. Demina, A. V. Kudrin, “Formation of a domain structure in multilayer CoPt films by magnetic probe of an atomic force microscope”, Fizika Tverdogo Tela, 60:11 (2018), 2158–2165 ; Phys. Solid State, 60:11 (2018), 2200–2206 |
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| 20. |
Yu. A. Danilov, A. V. Kudrin, V. P. Lesnikov, O. V. Vikhrova, R. N. Kriukov, I. N. Antonov, D. S. Tolkachev, A. V. Alaferdov, Z. E. Kun'kova, M. P. Temiryazeva, A. G. Temiryazev, “The study of features of formation and properties of À$^{3}$Â$^{5}$ semiconductors highly doped with iron”, Fizika Tverdogo Tela, 60:11 (2018), 2137–2140 ; Phys. Solid State, 60:11 (2018), 2178–2181 |
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| 21. |
Z. E. Kun'kova, E. A. Gan'shina, L. L. Golik, Yu. A. Danilov, A. V. Kudrin, V. I. Kovalev, G. S. Zykov, Yu. V. Markin, O. V. Vikhrova, B. N. Zvonkov, “Phase separation in GaMnAs layers grown by laser pulsed deposition”, Fizika Tverdogo Tela, 60:5 (2018), 940–946 ; Phys. Solid State, 60:5 (2018), 943–949 |
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| 22. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, I. N. Antonov, “The effect of the composition of a carrier gas during the growth of a Mn delta-layer on the electrical and magnetic properties of GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1286–1290 ; Semiconductors, 52:11 (2018), 1398–1402 |
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| 23. |
V. Ya. Aleshkin, N. V. Baidus, O. V. Vikhrova, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, D. V. Yurasov, “Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018), 67–74 ; Tech. Phys. Lett., 44:8 (2018), 735–738 |
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2017 |
| 24. |
A. V. Kudrin, M. V. Dorokhin, A. V. Zdoroveyshchev, P. B. Demina, O. V. Vikhrova, I. L. Kalentyeva, M. V. Ved, “Photoconductive detector of circularly polarized radiation based on a MIS structure with a CoPt layer”, Fizika Tverdogo Tela, 59:11 (2017), 2203–2205 ; Phys. Solid State, 59:11 (2017), 2223–2225 |
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| 25. |
A. V. Kudrin, Yu. A. Danilov, V. P. Lesnikov, O. V. Vikhrova, D. A. Pavlov, Yu. V. Usov, E. A. Pitirimova, I. N. Antonov, “Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature”, Fizika Tverdogo Tela, 59:11 (2017), 2200–2202 ; Phys. Solid State, 59:11 (2017), 2220–2222 |
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| 26. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, P. B. Demina, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin, “Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer”, Fizika Tverdogo Tela, 59:11 (2017), 2196–2199 ; Phys. Solid State, 59:11 (2017), 2216–2219 |
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| 27. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, V. P. Lesnikov, A. V. Nezhdanov, S. A. Pavlov, A. E. Parafin, I. Yu. Pashen'kin, S. M. Plankina, “Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing”, Fizika Tverdogo Tela, 59:11 (2017), 2130–2134 ; Phys. Solid State, 59:11 (2017), 2150–2154 |
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| 28. |
S. M. Plankina, O. V. Vikhrova, B. N. Zvonkov, A. V. Nezhdanov, I. Yu. Pashen'kin, “Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1510–1513 ; Semiconductors, 51:11 (2017), 1456–1459 |
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| 29. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, M. V. Dorokhin, D. A. Pavlov, I. N. Antonov, M. N. Drozdov, Yu. V. Usov, “Features of the selective manganese doping of GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1468–1472 ; Semiconductors, 51:11 (2017), 1415–1419 |
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| 30. |
B. N. Zvonkov, N. V. Baidus, S. M. Nekorkin, O. V. Vikhrova, A. V. Zdoroveyshchev, A. V. Kudrin, V. E. Kotomina, “Optical thyristor based on GaAs/InGaP materials”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1443–1446 ; Semiconductors, 51:11 (2017), 1391–1394 |
| 31. |
N. V. Dikareva, B. N. Zvonkov, O. V. Vikhrova, S. M. Nekorkin, V. Ya. Aleshkin, A. A. Dubinov, “Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1410–1413 ; Semiconductors, 51:10 (2017), 1360–1363 |
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| 32. |
S. M. Nekorkin, B. N. Zvonkov, N. V. Baidus, N. V. Dikareva, O. V. Vikhrova, A. A. Afonenko, D. V. Ushakov, “Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 75–78 ; Semiconductors, 51:1 (2017), 73–77 |
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2016 |
| 33. |
A. V. Zdoroveyshchev, M. V. Dorokhin, O. V. Vikhrova, P. B. Demina, A. V. Kudrin, A. G. Temiryazev, M. P. Temiryazeva, “Properties of CoPt ferromagnetic layers for application in spin light-emitting diodes”, Fizika Tverdogo Tela, 58:11 (2016), 2186–2189 ; Phys. Solid State, 58:11 (2016), 2267–2270 |
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| 34. |
Yu. A. Danilov, H. Boudinov, O. V. Vikhrova, A. V. Zdoroveyshchev, A. V. Kudrin, S. A. Pavlov, A. E. Parafin, E. A. Pitirimova, R. R. Yakubov, “Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing”, Fizika Tverdogo Tela, 58:11 (2016), 2140–2144 ; Phys. Solid State, 58:11 (2016), 2218–2222 |
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| 35. |
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vikhrova, A. I. Morozov, “Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1615–1619 ; Semiconductors, 50:12 (2016), 1589–1594 |
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| 36. |
S. M. Plankina, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, N. Yu. Konnova, A. V. Nezhdanov, I. Yu. Pashen'kin, “Study of the structures of cleaved cross sections by Raman spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1561–1564 ; Semiconductors, 50:11 (2016), 1539–1542 |
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| 37. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, M. N. Drozdov, “Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer $\delta$-doped with Mn”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1490–1496 ; Semiconductors, 50:11 (2016), 1469–1474 |
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| 38. |
A. N. Yablonskii, S. V. Morozov, D. M. Gaponova, V. Ya. Aleshkin, V. G. Shengurov, B. N. Zvonkov, O. V. Vikhrova, N. V. Baidus, Z. F. Krasil'nik, “Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1455–1458 ; Semiconductors, 50:11 (2016), 1435–1438 |
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| 39. |
V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, P. A. Yunin, M. N. Drozdov, O. V. Vikhrova, S. M. Nekorkin, B. N. Zvonkov, “Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 596–599 ; Semiconductors, 50:5 (2016), 586–589 |
| 40. |
I. L. Kalentyeva, O. V. Vikhrova, A. V. Zdoroveyshchev, Yu. A. Danilov, A. V. Kudrin, “GaAs structures with a gate dielectric based on aluminum-oxide layers”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 204–207 ; Semiconductors, 50:2 (2016), 204–207 |
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| 41. |
A. V. Rykov, M. V. Dorokhin, E. I. Malysheva, P. B. Demina, O. V. Vikhrova, A. V. Zdoroveyshchev, “Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn $\delta$ layer”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 3–8 ; Semiconductors, 50:1 (2016), 1–7 |
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2010 |
| 42. |
S. I. Dorozhkin, M. O. Skvortsova, A. V. Kudrin, B. N. Zvonkov, Yu. A. Danilov, O. V. Vikhrova, “Beatings of Shubnikov-de Haas oscillations in a two-dimensional hole system in an InGaAs quantum well”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:6 (2010), 312–317 ; JETP Letters, 91:6 (2010), 292–296  |
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2009 |
| 43. |
S. V. Zaitsev, M. V. Dorokhin, A. S. Brichkin, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, V. D. Kulakovskii, “Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well”, Pis'ma v Zh. Èksper. Teoret. Fiz., 90:10 (2009), 730–735 ; JETP Letters, 90:10 (2009), 658–662 |
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2008 |
| 44. |
B. A. Aronzon, A. S. Lagutin, V. V. Ryl'kov, V. V. Tugushev, V. N. Men'shov, A. V. Lashkul, R. Laiho, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, “Magnetic properties of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs}/\mathrm{In}_x\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs}$ quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 87:3 (2008), 192–198 ; JETP Letters, 87:3 (2008), 164–169 |
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2007 |
| 45. |
B. A. Aronzon, V. A. Kul'bachinskii, P. V. Gurin, A. B. Davydov, V. V. Ryl'kov, A. B. Granovskii, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, Y. Horikoshi, K. Onomitsu, “Anomalous hall effect in Mn $\delta$-doped GaAs/In$_{0.17}$Ga$_{0.83}$As/GaAs quantum wells with high hole mobility”, Pis'ma v Zh. Èksper. Teoret. Fiz., 85:1 (2007), 32–39 ; JETP Letters, 85:1 (2007), 27–33 |
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