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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12, Pages 1615–1619 (Mi phts6280)  
This article is cited in 1 scientific paper (total in 1 paper)

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer

S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vikhrova, A. I. Morozov

National Research Lobachevsky State University of Nizhny Novgorod
Full-text PDF (498 kB) Citations (1)
Abstract: The properties of metal–insulator–semiconductor (MIS) structures based on $n$-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/$n$-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.
Received: 27.04.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 12, Pages 1589–1594
DOI: https://doi.org/10.1134/S1063782616120228
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vikhrova, A. I. Morozov, “Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1615–1619; Semiconductors, 50:12 (2016), 1589–1594
Citation in format AMSBIB
\Bibitem{TikGorKor16}
\by S.~V.~Tikhov, O.~N.~Gorshkov, M.~N.~Koryazhkina, A.~P.~Kasatkin, I.~N.~Antonov, O.~V.~Vikhrova, A.~I.~Morozov
\paper Physical properties of metal--insulator--semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 12
\pages 1615--1619
\mathnet{http://mi.mathnet.ru/phts6280}
\elib{https://elibrary.ru/item.asp?id=27369060}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 12
\pages 1589--1594
\crossref{https://doi.org/10.1134/S1063782616120228}
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  • https://www.mathnet.ru/eng/phts/v50/i12/p1615
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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