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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 1, Pages 3–8
(Mi phts6554)
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This article is cited in 2 scientific papers (total in 2 papers)
Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn $\delta$ layer
A. V. Rykov, M. V. Dorokhin, E. I. Malysheva, P. B. Demina, O. V. Vikhrova, A. V. Zdoroveyshchev Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
The luminescence properties of light-emitting diodes based on GaAs/InGaAs heterostructures containing Mn-doped layers are studied. The dependences of the degree of electroluminescence circular polarization on the growth parameters, specifically, the Mn content and the hole concentration are obtained. A steady increase in the degree of electroluminescence circular polarization and in the Curie temperature of the ferromagnetic structure with increasing hole concentration is observed, and a change in sign of the degree of circular polarization under variations in the Mn content is revealed. The data are interpreted on the basis of well-known models of ferromagnetism in structures based on ferromagnetic semiconductors.
Received: 22.04.2015 Accepted: 22.04.2015
Citation:
A. V. Rykov, M. V. Dorokhin, E. I. Malysheva, P. B. Demina, O. V. Vikhrova, A. V. Zdoroveyshchev, “Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn $\delta$ layer”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 3–8; Semiconductors, 50:1 (2016), 1–7
Linking options:
https://www.mathnet.ru/eng/phts6554 https://www.mathnet.ru/eng/phts/v50/i1/p3
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