|
|
Publications in Math-Net.Ru |
Citations |
|
2022 |
1. |
T. V. Perevalov, R. M. Kh. Iskhakzai, I. P. Prosvirin, V. Sh. Aliev, V. A. Gritsenko, “Forming-free memristors based on hafnium oxide processed in electron cyclotron resonance hydrogen plasma”, Pis'ma v Zh. Èksper. Teoret. Fiz., 115:2 (2022), 89–93 ; JETP Letters, 115:2 (2022), 79–83 |
2
|
|
2021 |
2. |
Yu. N. Novikov, V. A. Gritsenko, “Multiphonon ionization of deep centers in amorphous boron nitride”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:7 (2021), 498–501 ; JETP Letters, 114:7 (2021), 433–436 |
4
|
3. |
V. N. Kruchinin, D. S. Odintsov, L. A. Shundrin, I. K. Shundrina, S. V. Rykhlitskii, E. V. Spesivtsev, V. A. Gritsenko, “Optical and electrochromic properties of thin films of ambipolar polyimides with pendant groups based on thioxanthenone derivatives”, Optics and Spectroscopy, 129:11 (2021), 1393–1399 ; Optics and Spectroscopy, 130:14 (2022), 2114–2119 |
2
|
4. |
V. N. Kruchinin, V. A. Volodin, S. V. Rykhlitskii, V. A. Gritsenko, I. P. Posvirin, Xiaoping Shi, M. R. Baklanov, “Atomic structure and optical properties of plasma enhanced chemical vapor deposited SiCOH Low-k dielectric film”, Optics and Spectroscopy, 129:5 (2021), 618 ; Optics and Spectroscopy, 129:6 (2021), 645–651 |
3
|
|
2020 |
5. |
T. V. Perevalov, V. N. Kruchinin, S. V. Rykhlitskii, V. A. Gritsenko, A. P. Eliseev, E. E. Lomonova, “Optical properties of (ZrO$_{2}$)$_{1-x}$(Y$_{2}$O$_{3}$)$_{x}$ ($x$ = 0–0.037) crystals grown by directional crystallization of the melt”, Optics and Spectroscopy, 128:12 (2020), 1830–1836 ; Optics and Spectroscopy, 128:12 (2020), 1963–1969 |
6. |
V. N. Kruchinin, T. V. Perevalov, V. Sh. Aliev, R. M. Kh. Iskhakzai, E. V. Spesivtsev, V. A. Gritsenko, V. A. Pustovarov, “Optical properties of thin films of SiO$_{x}$ $(x<2)$, obtained by exposure of thermal silicon dioxide in hydrogen plasma”, Optics and Spectroscopy, 128:10 (2020), 1467–1472 ; Optics and Spectroscopy, 128:10 (2020), 1577–1582 |
3
|
|
2019 |
7. |
T. V. Perevalov, V. A. Volodin, Yu. N. Novikov, G. N. Kamaev, V. A. Gritsenko, I. P. Prosvirin, “Nanoscale potential fluctuations in SiO$_{x}$ synthesized by the plasma enhanced chemical vapor deposition”, Fizika Tverdogo Tela, 61:12 (2019), 2528–2535 ; Phys. Solid State, 61:12 (2019), 2560–2568 |
2
|
8. |
T. V. Perevalov, V. A. Gritsenko, A. K. Gutakovskii, I. P. Prosvirin, “Structure of Hf$_{0.9}$La$_{0.1}$O$_2$ ferroelectric films obtained by the atomic layer deposition”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:2 (2019), 112–117 ; JETP Letters, 109:2 (2019), 116–120 |
5
|
9. |
V. N. Kruchinin, T. V. Perevalov, G. N. Kamaev, S. V. Rykhlitskii, V. A. Gritsenko, “Optical properties of nonstoichiometric silicon oxide SiO$_{x}$ ($x<$ 2)”, Optics and Spectroscopy, 127:5 (2019), 769–773 ; Optics and Spectroscopy, 127:5 (2019), 836–840 |
4
|
|
2018 |
10. |
D. R. Islamov, V. A. Gritsenko, V. N. Kruchinin, E. V. Ivanova, M. V. Zamoryanskaya, M. S. Lebedev, “The evolution of the conductivity and cathodoluminescence of the films of hafnium oxide in the case of a change in the concentration of oxygen vacancies”, Fizika Tverdogo Tela, 60:10 (2018), 2006–2013 ; Phys. Solid State, 60:10 (2018), 2050–2057 |
8
|
11. |
V. A. Gritsenko, T. V. Perevalov, V. A. Volodin, V. N. Kruchinin, A. K. Gerasimova, I. P. Prosvirin, “Atomic and electronic structures of metal-rich noncentrosymmetric ZrO$_x$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 108:4 (2018), 230–235 ; JETP Letters, 108:4 (2018), 226–230 |
2
|
12. |
A. A. Karpusin, V. A. Gritsenko, “Electronic structure of amorphous SiO$_{x}$ with variable composition”, Pis'ma v Zh. Èksper. Teoret. Fiz., 108:2 (2018), 114–118 ; JETP Letters, 108:2 (2018), 127–131 |
2
|
13. |
T. V. Perevalov, V. A. Gritsenko, D. R. Islamov, I. P. Prosvirin, “Electronic structure of oxygen vacancies in the orthorhombic noncentrosymmetric phase Hf$_{0.5}$Zr$_{0.5}$O$_2$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:1 (2018), 62–67 ; JETP Letters, 107:1 (2018), 55–60 |
10
|
14. |
V. N. Kruchinin, V. A. Volodin, T. V. Perevalov, A. K. Gerasimova, V. Sh. Aliev, V. A. Gritsenko, “Optical properties of nonstoichiometric tantalum oxide TaO$_{x}$ ($x<$ 5/2) according to spectral-ellipsometry and Raman-scattering data”, Optics and Spectroscopy, 124:6 (2018), 777–782 ; Optics and Spectroscopy, 124:6 (2018), 808–813 |
17
|
15. |
V. A. Gritsenko, Yu. N. Novikov, A. Chin, “Short-range order and charge transport in SiO$_{x}$: experiment and numerical simulation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018), 81–88 ; Tech. Phys. Lett., 44:6 (2018), 541–544 |
1
|
16. |
V. A. Volodin, V. A. Gritsenko, A. Chin, “Local oscillations of silicon–silicon bonds in silicon nitride”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018), 37–45 ; Tech. Phys. Lett., 44:5 (2018), 424–427 |
8
|
|
2017 |
17. |
Yu. N. Novikov, V. A. Gritsenko, “Relaxation of the electric current in Si$_{3}$N$_{4}$: Experiment and numerical simulation”, Fizika Tverdogo Tela, 59:1 (2017), 49–53 ; Phys. Solid State, 59:1 (2017), 47–52 |
2
|
18. |
V. A. Gritsenko, “Hot electrons in silicon oxide”, UFN, 187:9 (2017), 971–979 ; Phys. Usp., 60:9 (2017), 902–910 |
9
|
|
2016 |
19. |
A. A. Karpusin, A. N. Sorokin, V. A. Gritsenko, “Si-Si bond as a deep trap for electrons and holes in silicon nitride”, Pis'ma v Zh. Èksper. Teoret. Fiz., 103:3 (2016), 189–193 ; JETP Letters, 103:3 (2016), 171–174 |
7
|
|
2015 |
20. |
D. R. Islamov, A. G. Chernikova, M. G. Kozodaev, A. M. Markeev, T. V. Perevalov, V. A. Gritsenko, O. M. Orlov, “Charge transport mechanism in thin films of amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:8 (2015), 610–614 ; JETP Letters, 102:8 (2015), 544–547 |
29
|
|
2013 |
21. |
K. A. Nasyrov, V. A. Gritsenko, “Transport mechanisms of electrons and holes in dielectric films”, UFN, 183:10 (2013), 1099–1114 ; Phys. Usp., 56:10 (2013), 999–1012 |
59
|
|
2012 |
22. |
V. A. Gritsenko, “Electronic structure of silicon nitride”, UFN, 182:5 (2012), 531–541 ; Phys. Usp., 55:5 (2012), 498–507 |
47
|
|
2010 |
23. |
T. V. Perevalov, V. A. Gritsenko, “Application and electronic structure of high-permittivity dielectrics”, UFN, 180:6 (2010), 587–603 ; Phys. Usp., 53:6 (2010), 561–575 |
68
|
|
2009 |
24. |
Yu. N. Novikov, V. A. Gritsenko, K. A. Nasyrov, “Multiphonon mechanism of the ionization of traps in Al$_2$O$_3$Experiment and numerical simulation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:10 (2009), 599–602 ; JETP Letters, 89:10 (2009), 506–509 |
18
|
25. |
V. A. Gritsenko, “Structure of silicon/oxide and nitride/oxide interfaces”, UFN, 179:9 (2009), 921–930 ; Phys. Usp., 52:9 (2009), 869–877 |
29
|
|
2008 |
26. |
V. A. Gritsenko, “Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides”, UFN, 178:7 (2008), 727–737 ; Phys. Usp., 51:7 (2008), 699–708 |
65
|
|
2007 |
27. |
T. V. Perevalov, A. V. Shaposhnikov, V. A. Gritsenko, H. Wong, J. H. Han, C. W. Kim, “Electronic structure of $\alpha$-Al$_2$O$_3$: ab initio simulations and comparison with experiment”, Pis'ma v Zh. Èksper. Teoret. Fiz., 85:3 (2007), 197–201 ; JETP Letters, 85:3 (2007), 165–168 |
90
|
|
2005 |
28. |
D. V. Gritsenko, S. S. Shaimeev, M. A. Lamin, O. P. Pchelyakov, V. A. Gritsenko, V. G. Lifshits, “Two-band conductivity of ZrO<sub>2</sub> synthesized by molecular beam epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:11 (2005), 721–723 ; JETP Letters, 81:11 (2005), 587–589 |
11
|
|
2003 |
29. |
K. A. Nasyrov, Yu. N. Novikov, V. A. Gritsenko, S. Y. Yoon, C. W. Kim, “Multiphonon ionization of deep centers in amorphous silicon nitride: Experiment and numerical simulations”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003), 455–458 ; JETP Letters, 77:7 (2003), 385–388 |
11
|
|
1992 |
30. |
V. A. Gritsenko, Yu. P. Kostikov, L. V. Khramova, “Electronic structure of $\mathrm{Si}$–$\mathrm{H}$ and $\mathrm{N}$–$\mathrm{H}$ bonds in $\alpha$-$\mathrm{SiN}_{x}:\mathrm{H}$”, Fizika Tverdogo Tela, 34:8 (1992), 2424–2430 |
|
1986 |
31. |
V. A. Gritsenko, A. V. Rzhanov, S. P. Sinitsa, V. I. Fedchenko, G. N. Feofanov, “Shift of the absorption
edge in irradiated amorphous silicon nitride”, Dokl. Akad. Nauk SSSR, 287:6 (1986), 1381–1383 |
1
|
32. |
V. A. Gritsenko, P. A. Pundur, “Multiphonon capture and radiative transitions in $\alpha$-$\mathrm{Si}_{3}\mathrm{N}_{4}$”, Fizika Tverdogo Tela, 28:10 (1986), 3239–3242 |
1
|
|
1984 |
33. |
I. A. Brytov, V. A. Gritsenko, Yu. P. Kostikov, E. A. Obolenskii, Yu. N. Romashchenko, “Electron structure of amorphous $\mathrm{Si}_{3}\mathrm{N}_{4}$”, Fizika Tverdogo Tela, 26:6 (1984), 1685–1690 |
|
1983 |
34. |
V. A. Gritsenko, P. A. Pundur, “Cathodoluminescence of amorphous $\mathrm{Si}_{3}\mathrm{N}_{4}$”, Fizika Tverdogo Tela, 25:5 (1983), 1560–1562 |
|
Organisations |
|
|
|
|