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Uspekhi Fizicheskikh Nauk, 2009, Volume 179, Number 9, Pages 921–930
DOI: https://doi.org/10.3367/UFNr.0179.200909a.0921 (Mi ufn816) 		 
This article is cited in 29 scientific papers (total in 29 papers)

REVIEWS OF TOPICAL PROBLEMS

Structure of silicon/oxide and nitride/oxide interfaces

V. A. Gritsenko

Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Full-text PDF (1596 kB) Citations (29)
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DOI: https://doi.org/10.3367/UFNr.0179.200909a.0921
Abstract: Silicon/dielectric (Si/SiO$_2$,Si/SiO$_x$N$_y$) and dielectric/dielectric (Si$_3$N$_4$/SiO$_2$) interfaces that are at the heart of modern silicon technology are reviewed for what is currently known about their electronic structure.
Received: October 21, 2008
Revised: April 17, 2009
English version:
Physics–Uspekhi, 2009, Volume 52, Issue 9, Pages 869–877
DOI: https://doi.org/10.3367/UFNe.0179.200909a.0921
Bibliographic databases:
Document Type: Article
PACS: 61.43.-j, 61.66.Fn, 68.35.Dv, 71.55.Jv
Language: Russian
Citation: V. A. Gritsenko, “Structure of silicon/oxide and nitride/oxide interfaces”, UFN, 179:9 (2009), 921–930; Phys. Usp., 52:9 (2009), 869–877
Citation in format AMSBIB
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    • This publication is cited in the following 29 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    References:43
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