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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2021, Volume 114, Issue 7, Pages 498–501
DOI: https://doi.org/10.31857/S1234567821190095 (Mi jetpl6525) 		 
This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

Multiphonon ionization of deep centers in amorphous boron nitride

Yu. N. Novikova, V. A. Gritsenkoab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
b Novosibirsk State Technical University, Novosibirsk, 630073 Russia
Full-text PDF (227 kB) First page Citations (4)
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DOI: https://doi.org/10.31857/S1234567821190095
Abstract: Charge transport in amorphous boron nitride (BN) in a wide range of electric fields and temperatures has been experimentally considered. The method of quantitative comparison of the experiment and calculation of charge transport in BN is used to analyze the applicability of two models: the Frenkel effect and the multiphonon mechanism of trap ionization. It is found that the Frenkel effect qualitatively describes charge transport in BN. However, for such a description, it is necessary to use an unphysically small frequency factor of $4.3\times10^{11}\,$ s$^{-1}$. It is demonstrated that charge transport in BN is adequately described by the theory of multiphonon trap ionization. The thermal ($W_T = 1.0$ eV) and optical ( ${{W}_{{{\text{OPT}}}}} = 2.0$ eV) energies of the trap in BN have been determined.
Funding agency Grant number
Russian Foundation for Basic Research 20-57-12003
This work was supported by the Russian Foundation for Basic Research (project no. BRIKS-0-57-12003).
Received: 12.08.2021
Revised: 06.09.2021
Accepted: 07.09.2021
English version:
Journal of Experimental and Theoretical Physics Letters, 2021, Volume 114, Issue 7, Pages 433–436
DOI: https://doi.org/10.1134/S0021364021190097
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. N. Novikov, V. A. Gritsenko, “Multiphonon ionization of deep centers in amorphous boron nitride”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:7 (2021), 498–501; JETP Letters, 114:7 (2021), 433–436
Citation in format AMSBIB
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\pages 433--436
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    • This publication is cited in the following 4 articles:
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