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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 81, Issue 11, Pages 721–723
(Mi jetpl1769)
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This article is cited in 11 scientific papers (total in 11 papers)
CONDENSED MATTER
Two-band conductivity of ZrO2 synthesized by molecular beam epitaxy
D. V. Gritsenkoa, S. S. Shaimeeva, M. A. Lamina, O. P. Pchelyakova, V. A. Gritsenkoa, V. G. Lifshitsb a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
Abstract:
Using experiments on the injection of minority carriers from n-and p-type silicon, the contribution of electrons and holes to the conductivity of ZrO2 in the Si/ZrO2/Al structure is determined. It is found that electrons and holes make a contribution to the conductivity of ZrO2, so that ZrO2 exhibits two-band conductivity.
Received: 05.05.2005
Citation:
D. V. Gritsenko, S. S. Shaimeev, M. A. Lamin, O. P. Pchelyakov, V. A. Gritsenko, V. G. Lifshits, “Two-band conductivity of ZrO2 synthesized by molecular beam epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:11 (2005), 721–723; JETP Letters, 81:11 (2005), 587–589
Linking options:
https://www.mathnet.ru/eng/jetpl1769 https://www.mathnet.ru/eng/jetpl/v81/i11/p721
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