D. V. Gritsenko, S. S. Shaimeev, M. A. Lamin, O. P. Pchelyakov, V. A. Gritsenko, V. G. Lifshits, “Two-band conductivity of ZrO2 synthesized by molecular beam epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:11 (2005), 721–723; JETP Letters, 81:11 (2005), 587

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 81, Issue 11, Pages 721–723 (Mi jetpl1769)

This article is cited in 11 scientific papers (total in 11 papers)

CONDENSED MATTER

Two-band conductivity of ZrO₂ synthesized by molecular beam epitaxy

D. V. Gritsenko^a, S. S. Shaimeev^a, M. A. Lamin^a, O. P. Pchelyakov^a, V. A. Gritsenko^a, V. G. Lifshits^b

^a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
^b Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok

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Abstract: Using experiments on the injection of minority carriers from n-and p-type silicon, the contribution of electrons and holes to the conductivity of ZrO₂ in the Si/ZrO₂/Al structure is determined. It is found that electrons and holes make a contribution to the conductivity of ZrO₂, so that ZrO₂ exhibits two-band conductivity.

Received: 05.05.2005

English version:
Journal of Experimental and Theoretical Physics Letters, 2005, Volume 81, Issue 11, Pages 587–589
DOI: https://doi.org/10.1134/1.2029950

Bibliographic databases:

Document Type: Article

PACS: 77.22.Jp, 77.55.+f, 77.84.Bw

Language: Russian

Citation: D. V. Gritsenko, S. S. Shaimeev, M. A. Lamin, O. P. Pchelyakov, V. A. Gritsenko, V. G. Lifshits, “Two-band conductivity of ZrO₂ synthesized by molecular beam epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:11 (2005), 721–723; JETP Letters, 81:11 (2005), 587–589

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This publication is cited in the following 11 articles:

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