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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2016, Volume 103, Issue 3, Pages 189–193
DOI: https://doi.org/10.7868/S0370274X16030061
(Mi jetpl4854)
 

This article is cited in 7 scientific papers (total in 7 papers)

CONDENSED MATTER

Si-Si bond as a deep trap for electrons and holes in silicon nitride

A. A. Karpusina, A. N. Sorokina, V. A. Gritsenkoba

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
b Novosibirsk National Research State University, ul. Pirogova 2, Novosibirsk, 630090, Russia
Full-text PDF (415 kB) Citations (7)
References:
Abstract: A two-stage model of the capture of electrons and holes in traps in amorphous silicon nitride Si$_3$N$_4$ has been proposed. The electronic structure of a “Si-Si bond” intrinsic defect in Si$_3$N$_4$ has been calculated in the tight-binding approximation without fitting parameters. The properties of the Si-Si bond such as a giant cross section for capture of electrons and holes and a giant lifetime of trapped carriers have been explained. It has been shown that the Si-Si bond in the neutral state gives shallow levels near the bottom of the conduction band and the top of the valence band, which have a large cross section for capture. The capture of an electron or a hole on this bond is accompanied by the shift of shallow levels by $1.4$$1.5$ eV to the band gap owing to the polaron effect and a change in the localization region of valence electrons of atoms of the Si-Si bond. The calculations have been proposed with a new method for parameterizing the matrix elements of the tightbinding Hamiltonian taking into account a change in the localization region of valence electrons of an isolated atom incorporated into a solid.
Funding agency Grant number
Russian Foundation for Basic Research 14-02-31631_мол_а
Received: 24.08.2015
Revised: 25.11.2015
English version:
Journal of Experimental and Theoretical Physics Letters, 2016, Volume 103, Issue 3, Pages 171–174
DOI: https://doi.org/10.1134/S0021364016030085
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Karpusin, A. N. Sorokin, V. A. Gritsenko, “Si-Si bond as a deep trap for electrons and holes in silicon nitride”, Pis'ma v Zh. Èksper. Teoret. Fiz., 103:3 (2016), 189–193; JETP Letters, 103:3 (2016), 171–174
Citation in format AMSBIB
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  • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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