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This article is cited in 7 scientific papers (total in 7 papers)
CONDENSED MATTER
Si-Si bond as a deep trap for electrons and holes in silicon nitride
A. A. Karpusina, A. N. Sorokina, V. A. Gritsenkoba a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
b Novosibirsk National Research State University, ul. Pirogova 2, Novosibirsk, 630090, Russia
Abstract:
A two-stage model of the capture of electrons and holes in traps in amorphous silicon nitride Si$_3$N$_4$ has been proposed. The electronic structure of a “Si-Si bond” intrinsic defect in Si$_3$N$_4$ has been calculated in the tight-binding approximation without fitting parameters. The properties of the Si-Si bond such as a giant cross section for capture of electrons and holes and a giant lifetime of trapped carriers have been explained. It has been shown that the Si-Si bond in the neutral state gives shallow levels near the bottom of the conduction band and the top of the valence band, which have a large cross section for capture. The capture of an electron or a hole on this bond is accompanied by the shift of shallow levels by $1.4$–$1.5$ eV to the band gap owing to the polaron effect and a change in the localization region of valence electrons of atoms of the Si-Si bond. The calculations have been proposed with a new method for parameterizing the matrix elements of the tightbinding Hamiltonian taking into account a change in the localization region of valence electrons of an isolated atom incorporated into a solid.
Received: 24.08.2015 Revised: 25.11.2015
Citation:
A. A. Karpusin, A. N. Sorokin, V. A. Gritsenko, “Si-Si bond as a deep trap for electrons and holes in silicon nitride”, Pis'ma v Zh. Èksper. Teoret. Fiz., 103:3 (2016), 189–193; JETP Letters, 103:3 (2016), 171–174
Linking options:
https://www.mathnet.ru/eng/jetpl4854 https://www.mathnet.ru/eng/jetpl/v103/i3/p189
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Abstract page: | 291 | Full-text PDF : | 200 | References: | 68 | First page: | 46 |
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