Abstract:
A two-stage model of the capture of electrons and holes in traps in amorphous silicon nitride Si3N4 has been proposed. The electronic structure of a “Si-Si bond” intrinsic defect in Si3N4 has been calculated in the tight-binding approximation without fitting parameters. The properties of the Si-Si bond such as a giant cross section for capture of electrons and holes and a giant lifetime of trapped carriers have been explained. It has been shown that the Si-Si bond in the neutral state gives shallow levels near the bottom of the conduction band and the top of the valence band, which have a large cross section for capture. The capture of an electron or a hole on this bond is accompanied by the shift of shallow levels by 1.4–1.5 eV to the band gap owing to the polaron effect and a change in the localization region of valence electrons of atoms of the Si-Si bond. The calculations have been proposed with a new method for parameterizing the matrix elements of the tightbinding Hamiltonian taking into account a change in the localization region of valence electrons of an isolated atom incorporated into a solid.
Citation:
A. A. Karpusin, A. N. Sorokin, V. A. Gritsenko, “Si-Si bond as a deep trap for electrons and holes in silicon nitride”, Pis'ma v Zh. Èksper. Teoret. Fiz., 103:3 (2016), 189–193; JETP Letters, 103:3 (2016), 171–174
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\by A.~A.~Karpusin, A.~N.~Sorokin, V.~A.~Gritsenko
\paper Si-Si bond as a deep trap for electrons and holes in silicon nitride
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2016
\vol 103
\issue 3
\pages 189--193
\mathnet{http://mi.mathnet.ru/jetpl4854}
\crossref{https://doi.org/10.7868/S0370274X16030061}
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\jour JETP Letters
\yr 2016
\vol 103
\issue 3
\pages 171--174
\crossref{https://doi.org/10.1134/S0021364016030085}
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Linking options:
https://www.mathnet.ru/eng/jetpl4854
https://www.mathnet.ru/eng/jetpl/v103/i3/p189
This publication is cited in the following 7 articles:
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A. A. Karpusin, V. A. Gritsenko, JETP Letters, 108:2 (2018), 127–131
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