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Fizika Tverdogo Tela, 2017, Volume 59, Issue 1, Pages 49–53
DOI: https://doi.org/10.21883/FTT.2017.01.43949.234 (Mi ftt9705) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Dielectrics

Relaxation of the electric current in Si3N4: Experiment and numerical simulation

Yu. N. Novikova, V. A. Gritsenkoab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Full-text PDF (268 kB) Citations (2)
DOI: https://doi.org/10.21883/FTT.2017.01.43949.234
Abstract: The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10−13 cm2.
Received: 07.06.2016
English version:
Physics of the Solid State, 2017, Volume 59, Issue 1, Pages 47–52
DOI: https://doi.org/10.1134/S1063783417010255
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. N. Novikov, V. A. Gritsenko, “Relaxation of the electric current in Si3N4: Experiment and numerical simulation”, Fizika Tverdogo Tela, 59:1 (2017), 49–53; Phys. Solid State, 59:1 (2017), 47–52
Citation in format AMSBIB
\Bibitem{NovGri17}
\by Yu.~N.~Novikov, V.~A.~Gritsenko
\paper Relaxation of the electric current in Si$_{3}$N$_{4}$: Experiment and numerical simulation
\jour Fizika Tverdogo Tela
\yr 2017
\vol 59
\issue 1
\pages 49--53
\mathnet{http://mi.mathnet.ru/ftt9705}
\crossref{https://doi.org/10.21883/FTT.2017.01.43949.234}
\elib{https://elibrary.ru/item.asp?id=28969428}
\transl
\jour Phys. Solid State
\yr 2017
\vol 59
\issue 1
\pages 47--52
\crossref{https://doi.org/10.1134/S1063783417010255}
Linking options:
  • https://www.mathnet.ru/eng/ftt9705
  • https://www.mathnet.ru/eng/ftt/v59/i1/p49
    • This publication is cited in the following 2 articles:
    1. Damir R. Islamov, Vladimir A. Gritsenko, Timofey V. Perevalov, Vladimir Sh. Aliev, Vladimir A. Nadolinny, Albert Chin, “Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II—Films”, Materialia, 15 (2021), 100980  crossref
    2. Damir R. Islamov, Vladimir A. Gritsenko, Timofey V. Perevalov, Vladimir Sh. Aliev, Alexander P. Yelisseyev, Vladimir A. Pustovarov, Vladimir A. Nadolinny, Elena E. Lomonova, Albert Chin, “Oxygen Vacancies in Zirconium Oxide as the Blue Luminescence Centers and Traps Responsible for Charge Transport”, SSRN Journal, 2020  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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