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This article is cited in 2 scientific papers (total in 2 papers)
Dielectrics
Relaxation of the electric current in Si$_{3}$N$_{4}$: Experiment and numerical simulation
Yu. N. Novikova, V. A. Gritsenkoab a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Abstract:
The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 $\times$ 10$^{-13}$ cm$^{2}$.
Received: 07.06.2016
Citation:
Yu. N. Novikov, V. A. Gritsenko, “Relaxation of the electric current in Si$_{3}$N$_{4}$: Experiment and numerical simulation”, Fizika Tverdogo Tela, 59:1 (2017), 49–53; Phys. Solid State, 59:1 (2017), 47–52
Linking options:
https://www.mathnet.ru/eng/ftt9705 https://www.mathnet.ru/eng/ftt/v59/i1/p49
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Abstract page: | 42 | Full-text PDF : | 17 |
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