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Doklady Akademii Nauk SSSR, 1986, Volume 287, Number 6, Pages 1381–1383 (Mi dan47454)  
This article is cited in 1 scientific paper (total in 1 paper)

PHYSICS

Shift of the absorption edge in irradiated amorphous silicon nitride

V. A. Gritsenko, A. V. Rzhanov, S. P. Sinitsa, V. I. Fedchenko, G. N. Feofanov

Institute of Semiconductor Physics of USSR Academy of Sciences, Siberian Branch, Novosibirsk
Full-text PDF (387 kB) Citations (1)
Received: 24.04.1985
Document Type: Article
UDC: 666.11.01:539.22:535.2
Language: Russian
Citation: V. A. Gritsenko, A. V. Rzhanov, S. P. Sinitsa, V. I. Fedchenko, G. N. Feofanov, “Shift of the absorption edge in irradiated amorphous silicon nitride”, Dokl. Akad. Nauk SSSR, 287:6 (1986), 1381–1383
Citation in format AMSBIB
\Bibitem{GriRzhSin86}
\by V.~A.~Gritsenko, A.~V.~Rzhanov, S.~P.~Sinitsa, V.~I.~Fedchenko, G.~N.~Feofanov
\paper Shift of the absorption
edge in irradiated amorphous silicon nitride
\jour Dokl. Akad. Nauk SSSR
\yr 1986
\vol 287
\issue 6
\pages 1381--1383
\mathnet{http://mi.mathnet.ru/dan47454}
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  • https://www.mathnet.ru/eng/dan/v287/i6/p1381
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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