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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2003, Volume 77, Issue 7, Pages 455–458
(Mi jetpl2783)
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This article is cited in 12 scientific papers (total in 12 papers)
Multiphonon ionization of deep centers in amorphous silicon nitride: Experiment and numerical simulations
K. A. Nasyrova, Yu. N. Novikovb, V. A. Gritsenkoa, S. Y. Yoonc, C. W. Kimc a Institute of Automation and Electrometry, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
c Samsung Advanced Institute of Technology
Abstract:
The conductivity of amorphous silicon nitride has been studied experimentally in a wide range of electric fields and temperatures. The experimental results are in a quantitative agreement with the theory of multiphonon ionization of deep centers for the bipolar model of conductivity. The best agreement between experiment and the calculation has been obtained for the same parameters of deep electron and hole centers.
Received: 03.03.2003
Citation:
K. A. Nasyrov, Yu. N. Novikov, V. A. Gritsenko, S. Y. Yoon, C. W. Kim, “Multiphonon ionization of deep centers in amorphous silicon nitride: Experiment and numerical simulations”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003), 455–458; JETP Letters, 77:7 (2003), 385–388
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https://www.mathnet.ru/eng/jetpl2783 https://www.mathnet.ru/eng/jetpl/v77/i7/p455
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Abstract page: | 207 | Full-text PDF : | 86 | References: | 51 |
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