Abstract:
The conductivity of amorphous silicon nitride has been studied experimentally in a wide range of electric fields and temperatures. The experimental results are in a quantitative agreement with the theory of multiphonon ionization of deep centers for the bipolar model of conductivity. The best agreement between experiment and the calculation has been obtained for the same parameters of deep electron and hole centers.
Citation:
K. A. Nasyrov, Yu. N. Novikov, V. A. Gritsenko, S. Y. Yoon, C. W. Kim, “Multiphonon ionization of deep centers in amorphous silicon nitride: Experiment and numerical simulations”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003), 455–458; JETP Letters, 77:7 (2003), 385–388