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Uspekhi Fizicheskikh Nauk, 2010, Volume 180, Number 6, Pages 587–603
DOI: https://doi.org/10.3367/UFNr.0180.201006b.0587 (Mi ufn2221) 		 
This article is cited in 70 scientific papers (total in 70 papers)

REVIEWS OF TOPICAL PROBLEMS

Application and electronic structure of high-permittivity dielectrics

T. V. Perevalov, V. A. Gritsenko

A. V. Rzhanov Institute of Semiconductor Physics of SB RAS
Full-text PDF (3248 kB) Citations (70)
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DOI: https://doi.org/10.3367/UFNr.0180.201006b.0587
Abstract: Major applications of high-permittivity dielectric materials in silicon devices are reviewed. The basics and software implementations of the electron density functional method are considered. Results of first-principle calculations of the electronic structure are analyzed for the three most important and promising high-permittivity dielectrics, Al$_2$O$_3$, HfO$_2$ and TiO$_2$.
Received: April 20, 2009
Revised: August 20, 2009
English version:
Physics–Uspekhi, 2010, Volume 53, Issue 6, Pages 561–575
DOI: https://doi.org/10.3367/UFNe.0180.201006b.0587
Bibliographic databases:
Document Type: Article
PACS: 71.15.Mb, 77.55.D-, 85.30.-z
Language: Russian
Citation: T. V. Perevalov, V. A. Gritsenko, “Application and electronic structure of high-permittivity dielectrics”, UFN, 180:6 (2010), 587–603; Phys. Usp., 53:6 (2010), 561–575
Citation in format AMSBIB
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    • This publication is cited in the following 70 articles:
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