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This article is cited in 29 scientific papers (total in 29 papers)
CONDENSED MATTER
Charge transport mechanism in thin films of amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$
D. R. Islamovab, A. G. Chernikovac, M. G. Kozodaevc, A. M. Markeevc, T. V. Perevalovab, V. A. Gritsenkoab, O. M. Orlovd a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
b Novosibirsk State University, Novosibirsk, 630090, Russia
c Moscow Institute of Physics and Technology, Dolgoprudnyi, Moscow region, 141700, Russia
d Research Institute of Molecular Electronics, Zelenograd, Moscow, 124460, Russia
Abstract:
The charge transport mechanism in thin amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ films has been studied. It has been shown that the transport mechanism in studied materials does not depend on the crystal phase and is phonon-assisted tunneling between traps. The comparison of the experimental current-voltage characteristics of TiN/Hf$_{0.5}$Zr$_{0.5}$O$_2$/Pt structures with the calculated ones provides the trap parameters: thermal energy of $1.25$ eV and the optical energy of $2.5$ eV. The trap concentration has been estimated as ${\sim}10^{19}{-}10^{20}$ cm$^{-3}$.
Received: 11.08.2015 Revised: 28.08.2015
Citation:
D. R. Islamov, A. G. Chernikova, M. G. Kozodaev, A. M. Markeev, T. V. Perevalov, V. A. Gritsenko, O. M. Orlov, “Charge transport mechanism in thin films of amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:8 (2015), 610–614; JETP Letters, 102:8 (2015), 544–547
Linking options:
https://www.mathnet.ru/eng/jetpl4769 https://www.mathnet.ru/eng/jetpl/v102/i8/p610
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Abstract page: | 240 | Full-text PDF : | 52 | References: | 37 | First page: | 11 |
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