Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Pis'ma v Zh. Èksper. Teoret. Fiz.:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2015, Volume 102, Issue 8, Pages 610–614
DOI: https://doi.org/10.7868/S0370274X15200126
(Mi jetpl4769)
 

This article is cited in 29 scientific papers (total in 29 papers)

CONDENSED MATTER

Charge transport mechanism in thin films of amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$

D. R. Islamovab, A. G. Chernikovac, M. G. Kozodaevc, A. M. Markeevc, T. V. Perevalovab, V. A. Gritsenkoab, O. M. Orlovd

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
b Novosibirsk State University, Novosibirsk, 630090, Russia
c Moscow Institute of Physics and Technology, Dolgoprudnyi, Moscow region, 141700, Russia
d Research Institute of Molecular Electronics, Zelenograd, Moscow, 124460, Russia
References:
Abstract: The charge transport mechanism in thin amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ films has been studied. It has been shown that the transport mechanism in studied materials does not depend on the crystal phase and is phonon-assisted tunneling between traps. The comparison of the experimental current-voltage characteristics of TiN/Hf$_{0.5}$Zr$_{0.5}$O$_2$/Pt structures with the calculated ones provides the trap parameters: thermal energy of $1.25$ eV and the optical energy of $2.5$ eV. The trap concentration has been estimated as ${\sim}10^{19}{-}10^{20}$ cm$^{-3}$.
Received: 11.08.2015
Revised: 28.08.2015
English version:
Journal of Experimental and Theoretical Physics Letters, 2015, Volume 102, Issue 8, Pages 544–547
DOI: https://doi.org/10.1134/S0021364015200047
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. R. Islamov, A. G. Chernikova, M. G. Kozodaev, A. M. Markeev, T. V. Perevalov, V. A. Gritsenko, O. M. Orlov, “Charge transport mechanism in thin films of amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:8 (2015), 610–614; JETP Letters, 102:8 (2015), 544–547
Citation in format AMSBIB
\Bibitem{IslCheKoz15}
\by D.~R.~Islamov, A.~G.~Chernikova, M.~G.~Kozodaev, A.~M.~Markeev, T.~V.~Perevalov, V.~A.~Gritsenko, O.~M.~Orlov
\paper Charge transport mechanism in thin films of amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2015
\vol 102
\issue 8
\pages 610--614
\mathnet{http://mi.mathnet.ru/jetpl4769}
\crossref{https://doi.org/10.7868/S0370274X15200126}
\elib{https://elibrary.ru/item.asp?id=25021564}
\transl
\jour JETP Letters
\yr 2015
\vol 102
\issue 8
\pages 544--547
\crossref{https://doi.org/10.1134/S0021364015200047}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000368406700012}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-84953375777}
Linking options:
  • https://www.mathnet.ru/eng/jetpl4769
  • https://www.mathnet.ru/eng/jetpl/v102/i8/p610
  • This publication is cited in the following 29 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
    Statistics & downloads:
    Abstract page:228
    Full-text PDF :47
    References:34
    First page:11
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024