D. R. Islamov, A. G. Chernikova, M. G. Kozodaev, A. M. Markeev, T. V. Perevalov, V. A. Gritsenko, O. M. Orlov, “Charge transport mechanism in thin films of amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:8 (2015), 610–614; JETP Letters, 102:8 (2015), 544

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2015, Volume 102, Issue 8, Pages 610–614
DOI: https://doi.org/10.7868/S0370274X15200126 (Mi jetpl4769)

This article is cited in 30 scientific papers (total in 30 papers)

CONDENSED MATTER

Charge transport mechanism in thin films of amorphous and ferroelectric Hf

_{0.5}

$_{0.5}$ Zr

_{0.5}

$_{0.5}$ O

_{2}

$_2$

D. R. Islamov^ab, A. G. Chernikova^c, M. G. Kozodaev^c, A. M. Markeev^c, T. V. Perevalov^ab, V. A. Gritsenko^ab, O. M. Orlov^d

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
^b Novosibirsk State University, Novosibirsk, 630090, Russia
^c Moscow Institute of Physics and Technology, Dolgoprudnyi, Moscow region, 141700, Russia
^d Research Institute of Molecular Electronics, Zelenograd, Moscow, 124460, Russia

Full-text PDF (254 kB) Citations (30)

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DOI: https://doi.org/10.7868/S0370274X15200126

Abstract: The charge transport mechanism in thin amorphous and ferroelectric Hf

_{0.5}

$_{0.5}$ Zr

_{0.5}

$_{0.5}$ O

_{2}

$_2$ films has been studied. It has been shown that the transport mechanism in studied materials does not depend on the crystal phase and is phonon-assisted tunneling between traps. The comparison of the experimental current-voltage characteristics of TiN/Hf

_{0.5}

$_{0.5}$ Zr

_{0.5}

$_{0.5}$ O

_{2}

$_2$ /Pt structures with the calculated ones provides the trap parameters: thermal energy of

1.25

$1.25$ eV and the optical energy of

2.5

$2.5$ eV. The trap concentration has been estimated as

\sim 10^{19} - 10^{20}

${\sim}10^{19}{-}10^{20}$ cm

^{- 3}

$^{-3}$ .

Received: 11.08.2015
Revised: 28.08.2015

English version:
Journal of Experimental and Theoretical Physics Letters, 2015, Volume 102, Issue 8, Pages 544–547
DOI: https://doi.org/10.1134/S0021364015200047

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: D. R. Islamov, A. G. Chernikova, M. G. Kozodaev, A. M. Markeev, T. V. Perevalov, V. A. Gritsenko, O. M. Orlov, “Charge transport mechanism in thin films of amorphous and ferroelectric Hf

_{0.5}

$_{0.5}$ Zr

_{0.5}

$_{0.5}$ O

_{2}

$_2$ ”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:8 (2015), 610–614; JETP Letters, 102:8 (2015), 544–547

Citation in format AMSBIB

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\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.

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\issue 8

\pages 610--614

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Linking options:

https://www.mathnet.ru/eng/jetpl4769

https://www.mathnet.ru/eng/jetpl/v102/i8/p610

This publication is cited in the following 30 articles:

Ngoc Le Trinh, Bonwook Gu, Kun Yang, Chi Thang Nguyen, Byungchan Lee, Hyun-Mi Kim, Hyeongkeun Kim, Youngho Kang, Min Hyuk Park, Han-Bo-Ram Lee, ACS Nano, 2025
D. R Islamov, T. V Perevalov, A. A Gismatulin, I. A Azarov, E. V Spesivtsev, V. A Gritsenko, Žurnal èksperimentalʹnoj i teoretičeskoj fiziki, 163:3 (2023), 392
D. R. Islamov, T. V. Perevalov, A. A. Gismatulin, I. A. Azarov, E. V. Spesivtsev, V. A. Gritsenko, J. Exp. Theor. Phys., 136:3 (2023), 345
Danilyuk A.L., Sidorova T.N., Borisenko V.E., Wang H., Rusli R., Lu Ch., Phys. Status Solidi A-Appl. Mat., 219:1 (2022), 2100525, 2100525
Timur M. Zalyalov, Damir R. Islamov, 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM), 2022, 48
Perevalov V T., Prosvirin I.P., Suprun E.A., Mehmood F., Mikolajick T., Schroeder U., Gritsenko V.A., J. Sci., 6:4 (2021), 595–600
Gonzalez Y., Youssef A.H., Dorfler A., Katoch R., El Mesoudy A., Sarkissian A., Drouin D., Ruediger A., Appl. Phys. Lett., 119:13 (2021), 132906
Islamov D.R. Gritsenko V.A. Perevalov V T. Aliev V.Sh. Nadolinny V.A. Chin A., Materialia, 15 (2021), 100980
A. A. Pil'nik, A. A. Chernov, D. R. Islamov, Sci Rep, 10:1 (2020), 15759
T. Schenk, M. Pesic, S. Slesazeck, U. Schroeder, T. Mikolajick, Rep. Prog. Phys., 83:8 (2020), 086501
A. G. Chernikova, M. G. Kozodaev, R. R. Khakimov, S. N. Polyakov, A. M. Markeev, Appl. Phys. Lett., 117:19 (2020), 192902
Damir R. Islamov, Vladimir A. Gritsenko, Timofey V. Perevalov, Vladimir Sh. Aliev, Alexander P. Yelisseyev, Vladimir A. Pustovarov, Vladimir A. Nadolinny, Elena E. Lomonova, Albert Chin, SSRN Journal, 2020
T. V. Perevalov, V. A. Gritsenko, A. K. Gutakovskii, I. P. Prosvirin, JETP Letters, 109:2 (2019), 116–120
T. V. Perevalov, A. K. Gutakovskii, V. N. Kruchinin, V. A. Gritsenko, I. P. Prosvirin, Mater. Res. Express, 6:3 (2019), 036403
S. J. Kim, J. Mohan, S. R. Summerfelt, J. Kim, JOM, 71:1 (2019), 246–255
L. Tang, Ch. Chen, A. Wei, K. Li, D. Zhang, K. Zhou, Ceram. Int., 45:3 (2019), 3140–3147
D. R. Islamov, V. A. Gritsenko, T. V. Perevalov, V. A. Pustovarov, O. M. Orlov, A. G. Chernikova, A. M. Markeev, S. Slesazeck, U. Schroeder, T. Mikolajick, G. Ya. Krasnikov, Acta Mater., 166 (2019), 47–55
T. V. Perevalov, V. A. Gritsenko, D. R. Islamov, I. P. Prosvirin, JETP Letters, 107:1 (2018), 55–60
A. G. Chernikova, M. G. Kozodaev, D. V. Negrov, E. V. Korostylev, M. H. Park, U. Schroeder, Ch. S. Hwang, A. M. Markeev, ACS Appl. Mater. Interfaces, 10:3 (2018), 2701–2708
T. V. Perevalov, D. R. Islamov, V. A. Gritsenko, I. P. Prosvirin, Nanotechnology, 29:19 (2018), 194001

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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