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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. S. Ivanov, D. G. Pavel'ev, S. V. Obolensky, E. S. Obolenskaya, “Radiation hardness of subterahertz radiation source based on heterodyne on Gunn diode generator and superlattice multiplier”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1501–1503   |
| 2. |
T. A. Shobolova, A. S. Mokeev, S. D. Rudakov, S. V. Obolensky, E. L. Shobolov, “Silicon metal–oxide–semiconductor transistor with a dependent pocket contact and two-layer polysilicon gate”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 916–921 ; Semiconductors, 55:12 (2021), 885–890 |
| 3. |
V. A. Belyakov, I. V. Makartsev, A. G. Fefelov, S. V. Obolensky, A. P. Vasil'ev, A. G. Kuz'menkov, M. M. Kulagina, N. A. Maleev, “Effect of double recess technology on the parameters of HEMT transistors on GaAs and InP substrates”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 890–894 |
| 4. |
E. A. Tarasova, S. V. Khazanova, O. L. Golikov, A. S. Puzanov, S. V. Obolensky, V. E. Zemlyakov, “Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 872–876 ; Semiconductors, 55:12 (2021), 895–898 |
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| 5. |
E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev, E. S. Semyonovykh, S. V. Khazanova, S. V. Obolensky, “Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 846–849 ; Semiconductors, 55:12 (2021), 903–906 |
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| 6. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, A. A. Potekhin, E. A. Tarasova, N. V. Vostokov, V. A. Kozlov, S. V. Obolensky, “Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 743–747 ; Semiconductors, 55:10 (2021), 780–784 |
| 7. |
V. I. Egorkin, S. V. Obolensky, V. E. Zemlyakov, A. A. Zaitsev, V. I. Garmash, “Study of nitrogen ion implantation through Si$_3$N$_4$ layer for GaN on Si power hemts isolation process”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 15–17 |
| 8. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, E. A. Tarasova, N. V. Vostokov, S. V. Obolensky, “Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 51–54 ; Tech. Phys. Lett., 47:4 (2021), 305–308 |
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| 9. |
S. V. Obolensky, E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev, “A comprehensive study of radiation defect clusters in GaAs structures after neutron irradiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021), 38–41 ; Tech. Phys. Lett., 47:3 (2021), 248–251 |
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2020 |
| 10. |
N. D. Abrosimova, M. N. Drozdov, S. V. Obolensky, “Secondary-ion mass spectroscopy for analysis of the implanted hydrogen profile in silicon and impurity composition of silicon-on-insulator structures”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1850–1853 ; Tech. Phys., 65:11 (2020), 1767–1770 |
| 11. |
D. I. Dyukov, A. G. Fefelov, A. V. Korotkov, D. G. Pavel'ev, V. A. Kozlov, E. S. Obolenskaya, A. S. Ivanov, S. V. Obolensky, “Comparison of the efficiency of promising heterostructure frequency-multiplier diodes of the THz-frequency range”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1158–1162 ; Semiconductors, 54:10 (2020), 1360–1364 |
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| 12. |
E. A. Tarasova, S. V. Obolensky, S. V. Khazanova, N. N. Grigoryeva, O. L. Golikov, A. B. Ivanov, A. S. Puzanov, “Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 968–973 ; Semiconductors, 54:9 (2020), 1155–1160 |
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| 13. |
I. Yu. Zabavichev, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Impact of the potential of scattering at radiation-induced defects on carrier transport in GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 945–951 ; Semiconductors, 54:9 (2020), 1134–1140 |
| 14. |
A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “On heating and relaxation of the electron–hole-gas energy in the track of a primary recoil atom”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 791–795 ; Semiconductors, 54:8 (2020), 946–950 |
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2019 |
| 15. |
T. A. Shobolova, A. V. Korotkov, E. V. Petryakova, A. V. Lipatnikov, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Comparison of the radiation resistance of prospective bipolar and heterobipolar transistors”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1391–1394 ; Semiconductors, 53:10 (2019), 1353–1356 |
| 16. |
I. Yu. Zabavichev, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1279–1284 ; Semiconductors, 53:9 (2019), 1249–1254 |
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| 17. |
G. M. Umnyagin, V. E. Degtyarov, S. V. Obolensky, “Numerical simulation of the current–voltage characteristics of bilayer resistive memory based on non-stoichiometric metal oxides”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1275–1278 ; Semiconductors, 53:9 (2019), 1246–1248 |
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| 18. |
A. S. Puzanov, M. M. Venediktov, S. V. Obolensky, V. A. Kozlov, “Computational and experimental simulation of static memory cells of submicron microcircuits under the effect of neutron fluxes”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1250–1256 ; Semiconductors, 53:9 (2019), 1222–1228 |
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| 19. |
Yu. A. Kabalnov, A. N. Trufanov, S. V. Obolensky, “Investigation into the radiation hardness of photodiodes based on silicon-on-sapphire structures”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 388–395 ; Semiconductors, 53:3 (2019), 368–374 |
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2018 |
| 20. |
M. M. Venediktov, E. A. Tarasova, A. D. Bozhen'kina, S. V. Obolensky, V. V. Elesin, G. V. Chukov, I. O. Metelkin, M. A. Krevskiy, D. I. Dyukov, A. G. Fefelov, “Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1414–1420 ; Semiconductors, 52:12 (2018), 1518–1524 |
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| 21. |
A. V. Khananova, S. V. Obolensky, “Development of a physical-topological model for the response of a high-power vertical DMOS transistor to the effect of pulsed gamma-radiation”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1366–1372 ; Semiconductors, 52:11 (2018), 1477–1483 |
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| 22. |
A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Application of the locally nonequilibrium diffusion-drift Cattaneo–Vernotte model to the calculation of photocurrent relaxation in diode structures under subpicosecond pulses of ionizing radiation”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1295–1299 ; Semiconductors, 52:11 (2018), 1407–1411 |
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2017 |
| 23. |
E. A. Tarasova, S. V. Obolensky, O. E. Galkin, A. V. Hananova, A. B. Makarov, “Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1543–1546 ; Semiconductors, 51:11 (2017), 1490–1494 |
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| 24. |
I. Yu. Zabavichev, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1520–1524 ; Semiconductors, 51:11 (2017), 1466–1471 |
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| 25. |
D. G. Pavel'ev, A. P. Vasil'ev, V. A. Kozlov, E. S. Obolenskaya, S. V. Obolensky, V. M. Ustinov, “Optimization of the superlattice parameters for THz diodes”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1493–1497 ; Semiconductors, 51:11 (2017), 1439–1443 |
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| 26. |
I. Yu. Zabavichev, E. S. Obolenskaya, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1489–1492 ; Semiconductors, 51:11 (2017), 1435–1438 |
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2016 |
| 27. |
A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1706–1712 ; Semiconductors, 50:12 (2016), 1678–1683 |
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| 28. |
E. S. Obolenskaya, E. A. Tarasova, A. Yu. Churin, S. V. Obolensky, V. A. Kozlov, “Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1605–1609 ; Semiconductors, 50:12 (2016), 1579–1583 |
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| 29. |
E. A. Tarasova, E. S. Obolenskaya, A. V. Hananova, S. V. Obolensky, V. E. Zemlyakov, V. I. Egorkin, A. V. Nezhentsev, A. V. Sakharov, A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, G. V. Medvedev, “Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1599–1604 ; Semiconductors, 50:12 (2016), 1574–1578 |
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| 30. |
D. G. Pavel'ev, A. P. Vasil'ev, V. A. Kozlov, Yu. I. Koschurinov, E. S. Obolenskaya, S. V. Obolensky, V. M. Ustinov, “Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1548–1553 ; Semiconductors, 50:11 (2016), 1526–1531 |
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| 31. |
E. A. Tarasova, A. V. Hananova, S. V. Obolensky, V. E. Zemlyakov, Yu. N. Sveshnikov, V. I. Egorkin, V. A. Ivanov, G. V. Medvedev, D. S. Smotrin, “Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 331–338 ; Semiconductors, 50:3 (2016), 326–333 |
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