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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 10, Pages 846–849
DOI: https://doi.org/10.21883/FTP.2021.10.51431.19 (Mi phts4950) 		 
This article is cited in 1 scientific paper (total in 1 paper)

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons

E. V. Volkovaa, A. B. Loginovb, B. A. Loginovc, E. A. Tarasovaa, A. S. Puzanova, S. A. Korolevd, E. S. Semyonovykha, S. V. Khazanovaa, S. V. Obolenskya

a Lobachevsky State University of Nizhny Novgorod
b Lomonosov Moscow State University
c National Research University of Electronic Technology
d Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (868 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2021.10.51431.19
Abstract: The electrophysical parameters and surface morphology of GaAs $n/n^-$ structures with Schottky contacts before and after neuron impact with an average energy of about 1 MeV were studied. Changes in the profiles of the concentration and mobility of electrons in the structures were determined by the C-V method measurements. The method of atomic force microscopy helped to find radiation defect clusters which appearing during impact. A complex approach to the determination of their parameters is proposed.
Keywords: GaAs structure, Schottky contacts, fast neutrons.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0729-2020-0035
This work was supported by the Ministry of Science and Higher Education of the Russian Federation as part of a state task for the Lobachevsky State University of Nizhny Novgorod (project no. 0729-2020-0035).
Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021
English version:
Semiconductors, 2021, Volume 55, Issue 12, Pages 903–906
DOI: https://doi.org/10.1134/S1063782621100274
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev, E. S. Semyonovykh, S. V. Khazanova, S. V. Obolensky, “Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 846–849; Semiconductors, 55:12 (2021), 903–906
Citation in format AMSBIB
\Bibitem{VolLogLog21}
\by E.~V.~Volkova, A.~B.~Loginov, B.~A.~Loginov, E.~A.~Tarasova, A.~S.~Puzanov, S.~A.~Korolev, E.~S.~Semyonovykh, S.~V.~Khazanova, S.~V.~Obolensky
\paper Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 10
\pages 846--849
\mathnet{http://mi.mathnet.ru/phts4950}
\crossref{https://doi.org/10.21883/FTP.2021.10.51431.19}
\elib{https://elibrary.ru/item.asp?id=46486056}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 12
\pages 903--906
\crossref{https://doi.org/10.1134/S1063782621100274}
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