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This article is cited in 2 scientific papers (total in 2 papers)
XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021
Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs
E. A. Tarasovaa, S. V. Khazanovaa, O. L. Golikova, A. S. Puzanova, S. V. Obolenskya, V. E. Zemlyakovb a Lobachevsky State University of Nizhny Novgorod
b National Research University of Electronic Technology
Abstract:
The paper presents the results of modeling the electrophysical parameters of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structures via self-consistent solution of the Schrödinger and Poisson equations. On the basis of numerical calculations, a method for analyzing nonlinear distortions of the transfer current–voltage characteristics of such transistors is proposed. The effect of the spacer layers and the doping level of the $\delta$ layer on the nonlinearity of the current–voltage characteristics is estimated.
Keywords:
AlGaAs/InGaAs/GaAs pHEMT, nonlinear distortions, spacer layers.
Received: 12.04.2021 Revised: 19.04.2021 Accepted: 19.04.2021
Citation:
E. A. Tarasova, S. V. Khazanova, O. L. Golikov, A. S. Puzanov, S. V. Obolensky, V. E. Zemlyakov, “Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 872–876; Semiconductors, 55:12 (2021), 895–898
Linking options:
https://www.mathnet.ru/eng/phts4955 https://www.mathnet.ru/eng/phts/v55/i10/p872
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