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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 10, Pages 872–876
DOI: https://doi.org/10.21883/FTP.2021.10.51436.35 (Mi phts4955) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs

E. A. Tarasovaa, S. V. Khazanovaa, O. L. Golikova, A. S. Puzanova, S. V. Obolenskya, V. E. Zemlyakovb

a Lobachevsky State University of Nizhny Novgorod
b National Research University of Electronic Technology
Full-text PDF (459 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2021.10.51436.35
Abstract: The paper presents the results of modeling the electrophysical parameters of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structures via self-consistent solution of the Schrödinger and Poisson equations. On the basis of numerical calculations, a method for analyzing nonlinear distortions of the transfer current–voltage characteristics of such transistors is proposed. The effect of the spacer layers and the doping level of the $\delta$ layer on the nonlinearity of the current–voltage characteristics is estimated.
Keywords: AlGaAs/InGaAs/GaAs pHEMT, nonlinear distortions, spacer layers.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0729-2020-0057
This work was carried out as part of state task, project no. 0729-2020-0057.
Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021
English version:
Semiconductors, 2021, Volume 55, Issue 12, Pages 895–898
DOI: https://doi.org/10.1134/S1063782621100250
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. A. Tarasova, S. V. Khazanova, O. L. Golikov, A. S. Puzanov, S. V. Obolensky, V. E. Zemlyakov, “Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 872–876; Semiconductors, 55:12 (2021), 895–898
Citation in format AMSBIB
\Bibitem{TarKhaGol21}
\by E.~A.~Tarasova, S.~V.~Khazanova, O.~L.~Golikov, A.~S.~Puzanov, S.~V.~Obolensky, V.~E.~Zemlyakov
\paper Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 10
\pages 872--876
\mathnet{http://mi.mathnet.ru/phts4955}
\crossref{https://doi.org/10.21883/FTP.2021.10.51436.35}
\elib{https://elibrary.ru/item.asp?id=46486061}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 12
\pages 895--898
\crossref{https://doi.org/10.1134/S1063782621100250}
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  • https://www.mathnet.ru/eng/phts/v55/i10/p872
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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