Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12, Pages 1414–1420
DOI: https://doi.org/10.21883/FTP.2018.12.46749.28 (Mi phts5652) 		 
This article is cited in 3 scientific papers (total in 3 papers)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation

M. M. Venediktova, E. A. Tarasovab, A. D. Bozhen'kinab, S. V. Obolenskyb, V. V. Elesinc, G. V. Chukovc, I. O. Metelkinc, M. A. Krevskiyd, D. I. Dyukovd, A. G. Fefelovd

a Federal Research and Production Center "Y. Sedakov Research Institute of Measuring Systems", Nizhny Novgorod, Russia
b Lobachevsky State University of Nizhny Novgorod
c National Engineering Physics Institute "MEPhI", Moscow
d OAO Research-and-Production Enterprise "Salut", Nizhny Novgorod, Russia
Full-text PDF (429 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2018.12.46749.28
Abstract: The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transistors based on them before and after $\gamma$-neutron irradiation.
Keywords: Microwave Transistors, Radiation-induced Defect Clusters (RDCs), Electron Distribution Profiles, Bulk Ionization Conductivity, Transistor Current.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 8.2373.2017/4.6
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 12, Pages 1518–1524
DOI: https://doi.org/10.1134/S1063782618120266
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. M. Venediktov, E. A. Tarasova, A. D. Bozhen'kina, S. V. Obolensky, V. V. Elesin, G. V. Chukov, I. O. Metelkin, M. A. Krevskiy, D. I. Dyukov, A. G. Fefelov, “Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1414–1420; Semiconductors, 52:12 (2018), 1518–1524
Citation in format AMSBIB
\Bibitem{VenTarBoz18}
\by M.~M.~Venediktov, E.~A.~Tarasova, A.~D.~Bozhen'kina, S.~V.~Obolensky, V.~V.~Elesin, G.~V.~Chukov, I.~O.~Metelkin, M.~A.~Krevskiy, D.~I.~Dyukov, A.~G.~Fefelov
\paper Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 12
\pages 1414--1420
\mathnet{http://mi.mathnet.ru/phts5652}
\crossref{https://doi.org/10.21883/FTP.2018.12.46749.28}
\elib{https://elibrary.ru/item.asp?id=36903625}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 12
\pages 1518--1524
\crossref{https://doi.org/10.1134/S1063782618120266}
Linking options:
  • https://www.mathnet.ru/eng/phts5652
  • https://www.mathnet.ru/eng/phts/v52/i12/p1414
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:29
    Full-text PDF :16
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024