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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 6, Pages 51–54
DOI: https://doi.org/10.21883/PJTF.2021.06.50761.18607 (Mi pjtf4834) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space

A. S. Puzanova, V. V. Bibikovaa, I. Yu. Zabavicheva, E. S. Obolenskayaa, E. A. Tarasovaa, N. V. Vostokovb, S. V. Obolenskya

a National Research Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (106 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2021.06.50761.18607
Abstract: Transient ionization processes occurring in a low-barrier GaAs Mott diode under the influence of heavy charged particles from outer space and laser pulses that imitate such particles are analyzed theoretically. The response of a diode to the influence of an As$^+$ ion with an energy of 200 MeV, which corresponds to a linear energy transfer of 26 MeV cm$^2$/mg, is compared with the response to the influence of optical radiation pulses of various durations (10–1000 fs) with a photon energy exceeding the band gap of GaAs.
Keywords: Mott diode, heavy charged particles from outer space, femtosecond laser.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0729-2020-0057
This study was performed within the framework of the base part of a state assignment, project no. 0729-2020-0057.
Received: 02.11.2020
Revised: 11.12.2020
Accepted: 16.12.2020
English version:
Technical Physics Letters, 2021, Volume 47, Issue 4, Pages 305–308
DOI: https://doi.org/10.1134/S1063785021030287
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, E. A. Tarasova, N. V. Vostokov, S. V. Obolensky, “Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 51–54; Tech. Phys. Lett., 47:4 (2021), 305–308
Citation in format AMSBIB
\Bibitem{PuzBibZab21}
\by A.~S.~Puzanov, V.~V.~Bibikova, I.~Yu.~Zabavichev, E.~S.~Obolenskaya, E.~A.~Tarasova, N.~V.~Vostokov, S.~V.~Obolensky
\paper Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 6
\pages 51--54
\mathnet{http://mi.mathnet.ru/pjtf4834}
\crossref{https://doi.org/10.21883/PJTF.2021.06.50761.18607}
\elib{https://elibrary.ru/item.asp?id=46301754}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 4
\pages 305--308
\crossref{https://doi.org/10.1134/S1063785021030287}
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    • This publication is cited in the following 1 articles:
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