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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 3, Pages 331–338 (Mi phts6512)  
This article is cited in 6 scientific papers (total in 6 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation

E. A. Tarasovaa, A. V. Hananovaa, S. V. Obolenskya, V. E. Zemlyakovb, Yu. N. Sveshnikovc, V. I. Egorkinc, V. A. Ivanovd, G. V. Medvedevd, D. S. Smotrinad

a Lobachevsky State University of Nizhny Novgorod
b National Research University of Electronic Technology
c JSC Elma-Malachit, Moscow, Zelenograd
d NPP "Salyut", Nizhny Novgorod, Russia
Full-text PDF (209 kB) Citations (6)
Abstract: The results of experimental studies of the parameters of GaN and GaAs structures before and after $\gamma$-neutron irradiation are reported. A special set of test diodes making it possible to reduce the error in the results of measuring the parameters of the structures, which is important in the design and optimization of the structure of semiconductor devices, is suggested.
Keywords: GaAs, Electron Distribution, Radiation Defect, Semiconductor Structure, Doping Profile.
Received: 07.07.2015
Accepted: 17.07.2015
English version:
Semiconductors, 2016, Volume 50, Issue 3, Pages 326–333
DOI: https://doi.org/10.1134/S1063782616030222
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. A. Tarasova, A. V. Hananova, S. V. Obolensky, V. E. Zemlyakov, Yu. N. Sveshnikov, V. I. Egorkin, V. A. Ivanov, G. V. Medvedev, D. S. Smotrin, “Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 331–338; Semiconductors, 50:3 (2016), 326–333
Citation in format AMSBIB
\Bibitem{TarHanObo16}
\by E.~A.~Tarasova, A.~V.~Hananova, S.~V.~Obolensky, V.~E.~Zemlyakov, Yu.~N.~Sveshnikov, V.~I.~Egorkin, V.~A.~Ivanov, G.~V.~Medvedev, D.~S.~Smotrin
\paper Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 3
\pages 331--338
\mathnet{http://mi.mathnet.ru/phts6512}
\elib{https://elibrary.ru/item.asp?id=25668168}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 3
\pages 326--333
\crossref{https://doi.org/10.1134/S1063782616030222}
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  • https://www.mathnet.ru/eng/phts/v50/i3/p331
    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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