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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11, Pages 1543–1546
DOI: https://doi.org/10.21883/FTP.2017.11.45108.22 (Mi phts6005) 		 
This article is cited in 3 scientific papers (total in 3 papers)

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation

E. A. Tarasova, S. V. Obolensky, O. E. Galkin, A. V. Hananova, A. B. Makarov

Lobachevsky State University of Nizhny Novgorod
Full-text PDF (123 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2017.11.45108.22
Abstract: A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility transistor) before and after $\gamma$-neutron irradiation with a fluence of 0.4 $\times$ 10$^{14}$ cm$^{-2}$ is suggested. The results of physical–topological simulation of an AlGaN/GaN HEMT on a SiC substrate are described. The error in calculating the GaN HEMT parameters due to inaccuracy in determining the electron distribution profile is determined.
Received: 27.04.2017
Accepted: 12.05.2017
English version:
Semiconductors, 2017, Volume 51, Issue 11, Pages 1490–1494
DOI: https://doi.org/10.1134/S1063782617110264
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. A. Tarasova, S. V. Obolensky, O. E. Galkin, A. V. Hananova, A. B. Makarov, “Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1543–1546; Semiconductors, 51:11 (2017), 1490–1494
Citation in format AMSBIB
\Bibitem{TarOboGal17}
\by E.~A.~Tarasova, S.~V.~Obolensky, O.~E.~Galkin, A.~V.~Hananova, A.~B.~Makarov
\paper Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 11
\pages 1543--1546
\mathnet{http://mi.mathnet.ru/phts6005}
\crossref{https://doi.org/10.21883/FTP.2017.11.45108.22}
\elib{https://elibrary.ru/item.asp?id=30546399}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 11
\pages 1490--1494
\crossref{https://doi.org/10.1134/S1063782617110264}
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  • https://www.mathnet.ru/eng/phts/v51/i11/p1543
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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