Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9, Pages 1279–1284
DOI: https://doi.org/10.21883/FTP.2019.09.48139.23 (Mi phts5417) 		 
This article is cited in 6 scientific papers (total in 6 papers)

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure

I. Yu. Zabavichevab, A. A. Potekhinab, A. S. Puzanovab, S. V. Obolenskyab, V. A. Kozlovac

a Lobachevsky State University of Nizhny Novgorod
b Branch of the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics "Sedakov Scientific Research Institute of Measurement Systems", Nizhny Novgorod, Russia
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (151 kB) Citations (6)
DOI: https://doi.org/10.21883/FTP.2019.09.48139.23
Abstract: The formation of a disordered defect region in bulk silicon is simulated using the molecular-dynamics method for various energies of a primary recoil atom. Variations in the volume and number of radiation-induced defects in a cluster during its formation are calculated. The generation rates of nonequilibrium carriers and amplitude-temporal dependences of pulses of ionization currents in test Schottky diodes with hyperhigh frequencies are found theoretically.
Keywords: molecular-dynamics method, cluster of radiation-induced defects, high-performance calculations.
Funding agency Grant number
Russian Science Foundation 18-13-00066
This study was supported by the Russian Scientific Foundation, project no. 18-13-00066.
Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 9, Pages 1249–1254
DOI: https://doi.org/10.1134/S1063782619090276
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. Yu. Zabavichev, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1279–1284; Semiconductors, 53:9 (2019), 1249–1254
Citation in format AMSBIB
\Bibitem{ZabPotPuz19}
\by I.~Yu.~Zabavichev, A.~A.~Potekhin, A.~S.~Puzanov, S.~V.~Obolensky, V.~A.~Kozlov
\paper Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 9
\pages 1279--1284
\mathnet{http://mi.mathnet.ru/phts5417}
\crossref{https://doi.org/10.21883/FTP.2019.09.48139.23}
\elib{https://elibrary.ru/item.asp?id=41129881}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 9
\pages 1249--1254
\crossref{https://doi.org/10.1134/S1063782619090276}
Linking options:
  • https://www.mathnet.ru/eng/phts5417
  • https://www.mathnet.ru/eng/phts/v53/i9/p1279
    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:50
    Full-text PDF :30
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024