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This article is cited in 3 scientific papers (total in 3 papers)
XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017
Optimization of the superlattice parameters for THz diodes
D. G. Pavel'eva, A. P. Vasil'evb, V. A. Kozlovac, E. S. Obolenskayaa, S. V. Obolenskya, V. M. Ustinovd a Lobachevsky State University of Nizhny Novgorod
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
d Ioffe Institute, St. Petersburg
Abstract:
Previously, GaAs/AlAs superlattices with a small active area ($\sim$1 $\mu$m$^2$) were used by us to design mixer diodes. It was established that these superlattices can efficiently be used in the terahertz (THz) range. It was theoretically and experimentally shown that short-period (i.e., containing few periods) superlattices in the composition of harmonic mixers have significant advantages in comparison with multi-period (with 50–100 or more periods) superlattices at frequencies of up to 5.3 THz. In this study, the superlattice design is optimized and the operation efficiency of short-period superlattices is shown to be determined to a large extent by the transition regions located at the superlattice edges.
Received: 27.04.2017 Accepted: 12.05.2017
Citation:
D. G. Pavel'ev, A. P. Vasil'ev, V. A. Kozlov, E. S. Obolenskaya, S. V. Obolensky, V. M. Ustinov, “Optimization of the superlattice parameters for THz diodes”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1493–1497; Semiconductors, 51:11 (2017), 1439–1443
Linking options:
https://www.mathnet.ru/eng/phts5994 https://www.mathnet.ru/eng/phts/v51/i11/p1493
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