|
This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor physics
Investigation into the radiation hardness of photodiodes based on silicon-on-sapphire structures
Yu. A. Kabalnova, A. N. Trufanova, S. V. Obolenskyb a Sedakov Scientific Research Institute of Measurement Systems, Nizhny Novgorod, Russia
b National Research Lobachevsky State University of Nizhny Novgorod
Abstract:
The electrical properties of photodiodes based on silicon-on-sapphire structures are investigated theoretically and experimentally. It is shown that they are no worse than silicon diodes in terms of their basic parameters, while their radiation hardness is higher by an order of magnitude than that of similar diodes based on bulk silicon.
Received: 10.01.2018 Revised: 13.09.2018
Citation:
Yu. A. Kabalnov, A. N. Trufanov, S. V. Obolensky, “Investigation into the radiation hardness of photodiodes based on silicon-on-sapphire structures”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 388–395; Semiconductors, 53:3 (2019), 368–374
Linking options:
https://www.mathnet.ru/eng/phts5570 https://www.mathnet.ru/eng/phts/v53/i3/p388
|
Statistics & downloads: |
Abstract page: | 33 | Full-text PDF : | 23 |
|