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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 9, Pages 968–973
DOI: https://doi.org/10.21883/FTP.2020.09.49841.35 (Mi phts5180) 		 
This article is cited in 5 scientific papers (total in 5 papers)

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm

E. A. Tarasova, S. V. Obolensky, S. V. Khazanova, N. N. Grigoryeva, O. L. Golikov, A. B. Ivanov, A. S. Puzanov

National Research Lobachevsky State University of Nizhny Novgorod
Full-text PDF (609 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2020.09.49841.35
Abstract: The nonlinearity of the gate–drain current–voltage characteristics in classical Schottky transistors and two-dimensional electron gas field-effect transistors based on AlGaAs/InGaAs/GaAs and InGaAs/GaAs compounds is analyzed. The carrier velocity-overshoot effect in the transistor channel is analyzed for various doping profiles of the structures under study.
Keywords: Schottky and HEMT transistors, gate–drain I–V characteristic, carrier velocity-overshoot effect.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 075-15-2020-529
This study was supported by the Ministry of Science and Higher Education of the Russian Federation within the Federal target program “Research and Development in Priority Areas of the Development of Science and Technology of Russia in 2014–2020”'. The unique identifier of the project is RFMEFI62020X0003. Agreement no. 07515-2020-529.
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 9, Pages 1155–1160
DOI: https://doi.org/10.1134/S1063782620090274
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. A. Tarasova, S. V. Obolensky, S. V. Khazanova, N. N. Grigoryeva, O. L. Golikov, A. B. Ivanov, A. S. Puzanov, “Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 968–973; Semiconductors, 54:9 (2020), 1155–1160
Citation in format AMSBIB
\Bibitem{TarOboKha20}
\by E.~A.~Tarasova, S.~V.~Obolensky, S.~V.~Khazanova, N.~N.~Grigoryeva, O.~L.~Golikov, A.~B.~Ivanov, A.~S.~Puzanov
\paper Compensation for the nonlinearity of the drain–gate I--V characteristic in field-effect transistors with a gate length of $\sim$100 nm
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 9
\pages 968--973
\mathnet{http://mi.mathnet.ru/phts5180}
\crossref{https://doi.org/10.21883/FTP.2020.09.49841.35}
\elib{https://elibrary.ru/item.asp?id=44154208}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 9
\pages 1155--1160
\crossref{https://doi.org/10.1134/S1063782620090274}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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