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This article is cited in 5 scientific papers (total in 5 papers)
XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020
Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm
E. A. Tarasova, S. V. Obolensky, S. V. Khazanova, N. N. Grigoryeva, O. L. Golikov, A. B. Ivanov, A. S. Puzanov National Research Lobachevsky State University of Nizhny Novgorod
Abstract:
The nonlinearity of the gate–drain current–voltage characteristics in classical Schottky transistors and two-dimensional electron gas field-effect transistors based on AlGaAs/InGaAs/GaAs and InGaAs/GaAs compounds is analyzed. The carrier velocity-overshoot effect in the transistor channel is analyzed for various doping profiles of the structures under study.
Keywords:
Schottky and HEMT transistors, gate–drain I–V characteristic, carrier velocity-overshoot effect.
Received: 15.04.2020 Revised: 21.04.2020 Accepted: 21.04.2020
Citation:
E. A. Tarasova, S. V. Obolensky, S. V. Khazanova, N. N. Grigoryeva, O. L. Golikov, A. B. Ivanov, A. S. Puzanov, “Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 968–973; Semiconductors, 54:9 (2020), 1155–1160
Linking options:
https://www.mathnet.ru/eng/phts5180 https://www.mathnet.ru/eng/phts/v54/i9/p968
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