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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11, Pages 1520–1524
DOI: https://doi.org/10.21883/FTP.2017.11.45103.17 (Mi phts6000) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons

I. Yu. Zabavicheva, A. A. Potekhina, A. S. Puzanova, S. V. Obolenskya, V. A. Kozlovab

a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (482 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2017.11.45103.17
Abstract: Calculation is performed for a flux of charge carriers in the structure of a GaAs bipolar transistor with a thin base in the case where a single cluster of radiation-induced defects is formed in the operating region of a transistor. It is shown that the site of the appearance of a cluster of radiation-induced defects greatly affects the degree of degradation of the gain of a bipolar transistor. The probabilistic assessment of radiation-induced puncture of the base in relation to its thickness and to the neutron fluence is obtained.
Received: 27.04.2017
Accepted: 12.05.2017
English version:
Semiconductors, 2017, Volume 51, Issue 11, Pages 1466–1471
DOI: https://doi.org/10.1134/S106378261711029X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. Yu. Zabavichev, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1520–1524; Semiconductors, 51:11 (2017), 1466–1471
Citation in format AMSBIB
\Bibitem{ZabPotPuz17}
\by I.~Yu.~Zabavichev, A.~A.~Potekhin, A.~S.~Puzanov, S.~V.~Obolensky, V.~A.~Kozlov
\paper Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 11
\pages 1520--1524
\mathnet{http://mi.mathnet.ru/phts6000}
\crossref{https://doi.org/10.21883/FTP.2017.11.45103.17}
\elib{https://elibrary.ru/item.asp?id=30546393}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 11
\pages 1466--1471
\crossref{https://doi.org/10.1134/S106378261711029X}
Linking options:
  • https://www.mathnet.ru/eng/phts6000
  • https://www.mathnet.ru/eng/phts/v51/i11/p1520
    • This publication is cited in the following 2 articles:
    1. I. Yu. Zabavichev, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Impact of the potential of scattering at radiation-induced defects on carrier transport in GaAs structures”, Semiconductors, 54:9 (2020), 1134–1140  mathnet  mathnet  crossref  crossref
    2. I. Yu. Zabavichev, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure”, Semiconductors, 53:9 (2019), 1249–1254  mathnet  mathnet  crossref  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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