Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11, Pages 1520–1524
DOI: https://doi.org/10.21883/FTP.2017.11.45103.17 (Mi phts6000) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons

I. Yu. Zabavicheva, A. A. Potekhina, A. S. Puzanova, S. V. Obolenskya, V. A. Kozlovab

a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (482 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2017.11.45103.17
Abstract: Calculation is performed for a flux of charge carriers in the structure of a GaAs bipolar transistor with a thin base in the case where a single cluster of radiation-induced defects is formed in the operating region of a transistor. It is shown that the site of the appearance of a cluster of radiation-induced defects greatly affects the degree of degradation of the gain of a bipolar transistor. The probabilistic assessment of radiation-induced puncture of the base in relation to its thickness and to the neutron fluence is obtained.
Received: 27.04.2017
Accepted: 12.05.2017
English version:
Semiconductors, 2017, Volume 51, Issue 11, Pages 1466–1471
DOI: https://doi.org/10.1134/S106378261711029X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. Yu. Zabavichev, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1520–1524; Semiconductors, 51:11 (2017), 1466–1471
Citation in format AMSBIB
\Bibitem{ZabPotPuz17}
\by I.~Yu.~Zabavichev, A.~A.~Potekhin, A.~S.~Puzanov, S.~V.~Obolensky, V.~A.~Kozlov
\paper Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 11
\pages 1520--1524
\mathnet{http://mi.mathnet.ru/phts6000}
\crossref{https://doi.org/10.21883/FTP.2017.11.45103.17}
\elib{https://elibrary.ru/item.asp?id=30546393}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 11
\pages 1466--1471
\crossref{https://doi.org/10.1134/S106378261711029X}
Linking options:
  • https://www.mathnet.ru/eng/phts6000
  • https://www.mathnet.ru/eng/phts/v51/i11/p1520
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:46
    Full-text PDF :20
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024