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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9, Pages 1275–1278
DOI: https://doi.org/10.21883/FTP.2019.09.48138.21 (Mi phts5416) 		 
This article is cited in 1 scientific paper (total in 1 paper)

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Numerical simulation of the current–voltage characteristics of bilayer resistive memory based on non-stoichiometric metal oxides

G. M. Umnyagin, V. E. Degtyarov, S. V. Obolensky

Lobachevsky State University of Nizhny Novgorod
Full-text PDF (560 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2019.09.48138.21
Abstract: The current–voltage characteristics of a resistive-memory structure based on non-stoichiometric tantalum oxides is numerically simulated. The results of pulsed studies of structures with different shapes of the conductive filament, such as a truncated cone with different generatrix inclination angles, are presented. It is shown how the shape and total volume of the conductive filament affects the current amplitude and the number of pulses necessary for complete filament breaking and restoration.
Keywords: resistive memory, non-stoichiometric, numerical simulation.
Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 9, Pages 1246–1248
DOI: https://doi.org/10.1134/S1063782619090252
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. M. Umnyagin, V. E. Degtyarov, S. V. Obolensky, “Numerical simulation of the current–voltage characteristics of bilayer resistive memory based on non-stoichiometric metal oxides”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1275–1278; Semiconductors, 53:9 (2019), 1246–1248
Citation in format AMSBIB
\Bibitem{UmnDegObo19}
\by G.~M.~Umnyagin, V.~E.~Degtyarov, S.~V.~Obolensky
\paper Numerical simulation of the current--voltage characteristics of bilayer resistive memory based on non-stoichiometric metal oxides
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 9
\pages 1275--1278
\mathnet{http://mi.mathnet.ru/phts5416}
\crossref{https://doi.org/10.21883/FTP.2019.09.48138.21}
\elib{https://elibrary.ru/item.asp?id=41129880}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 9
\pages 1246--1248
\crossref{https://doi.org/10.1134/S1063782619090252}
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  • https://www.mathnet.ru/eng/phts/v53/i9/p1275
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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