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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11, Pages 1295–1299
DOI: https://doi.org/10.21883/FTP.2018.11.46586.08 (Mi phts5683) 		 
This article is cited in 7 scientific papers (total in 7 papers)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Application of the locally nonequilibrium diffusion-drift Cattaneo–Vernotte model to the calculation of photocurrent relaxation in diode structures under subpicosecond pulses of ionizing radiation

A. S. Puzanova, S. V. Obolenskya, V. A. Kozlovab

a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (399 kB) Citations (7)
DOI: https://doi.org/10.21883/FTP.2018.11.46586.08
Abstract: The excitation-relaxation process in electron–hole plasma upon exposure to ionizing radiation for a time shorter than the relaxation time of the mobile carrier energy and momentum is considered. By the example of the calculation of transient ionization processes in a silicon hyperhigh-frequency Schottky diode, local-equilibrium and local-nonequilibrium carrier transport models are compared. It is shown that the local-nonequilibrium model features a wider field of application for describing fast relaxation processes.
Keywords: Cattaneo Vernotte, Photocurrent Relaxation, Electron-hole Plasma, Excitation-relaxation Processes, Perturbation Propagation Velocity.
Funding agency Grant number
Russian Academy of Sciences - Federal Agency for Scientific Organizations
Russian Foundation for Basic Research 15-02-07935
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 11, Pages 1407–1411
DOI: https://doi.org/10.1134/S1063782618110209
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Application of the locally nonequilibrium diffusion-drift Cattaneo–Vernotte model to the calculation of photocurrent relaxation in diode structures under subpicosecond pulses of ionizing radiation”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1295–1299; Semiconductors, 52:11 (2018), 1407–1411
Citation in format AMSBIB
\Bibitem{PuzOboKoz18}
\by A.~S.~Puzanov, S.~V.~Obolensky, V.~A.~Kozlov
\paper Application of the locally nonequilibrium diffusion-drift Cattaneo--Vernotte model to the calculation of photocurrent relaxation in diode structures under subpicosecond pulses of ionizing radiation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 11
\pages 1295--1299
\mathnet{http://mi.mathnet.ru/phts5683}
\crossref{https://doi.org/10.21883/FTP.2018.11.46586.08}
\elib{https://elibrary.ru/item.asp?id=36903601}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 11
\pages 1407--1411
\crossref{https://doi.org/10.1134/S1063782618110209}
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    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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