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This article is cited in 7 scientific papers (total in 7 papers)
XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018
Application of the locally nonequilibrium diffusion-drift Cattaneo–Vernotte model to the calculation of photocurrent relaxation in diode structures under subpicosecond pulses of ionizing radiation
A. S. Puzanova, S. V. Obolenskya, V. A. Kozlovab a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
The excitation-relaxation process in electron–hole plasma upon exposure to ionizing radiation for a time shorter than the relaxation time of the mobile carrier energy and momentum is considered. By the example of the calculation of transient ionization processes in a silicon hyperhigh-frequency Schottky diode, local-equilibrium and local-nonequilibrium carrier transport models are compared. It is shown that the local-nonequilibrium model features a wider field of application for describing fast relaxation processes.
Keywords:
Cattaneo Vernotte, Photocurrent Relaxation, Electron-hole Plasma, Excitation-relaxation Processes, Perturbation Propagation Velocity.
Received: 25.04.2018 Accepted: 07.05.2018
Citation:
A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Application of the locally nonequilibrium diffusion-drift Cattaneo–Vernotte model to the calculation of photocurrent relaxation in diode structures under subpicosecond pulses of ionizing radiation”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1295–1299; Semiconductors, 52:11 (2018), 1407–1411
Linking options:
https://www.mathnet.ru/eng/phts5683 https://www.mathnet.ru/eng/phts/v52/i11/p1295
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