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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12, Pages 1605–1609
(Mi phts6278)
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This article is cited in 1 scientific paper (total in 1 paper)
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account
E. S. Obolenskayaa, E. A. Tarasovaa, A. Yu. Churina, S. V. Obolenskya, V. A. Kozlovb a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
Microwave-signal generation in planar Gunn diodes with a two-dimensional electron gas, in which we previously studied steady-state electron transport, is theoretically studied. The applicability of a control electrode similar to a field-effect transistor gate to control the parameters of the output diode microwave signal is considered. The results of physical-topological modeling of semiconductor structures with different diode active-region structures, i.e., without a quantum well, with one and two quantum wells separated by a potential barrier, are compared. The calculated results are compared with our previous experimental data on recording Gunn generation in a Schottky-gate field-effect transistor. It is theoretically and experimentally shown that the power of the signal generated by the planar Gunn diode with a quantum well and a control electrode is sufficient to implement monolithic integrated circuits of different functionalities. It is theoretically and experimentally shown that the use of a control electrode on account of the introduction of corrective feedback allows a significant increase in the radiation resistance of a microwave generator with Schottky-gate field-effect transistors.
Received: 27.04.2016 Accepted: 10.05.2016
Citation:
E. S. Obolenskaya, E. A. Tarasova, A. Yu. Churin, S. V. Obolensky, V. A. Kozlov, “Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1605–1609; Semiconductors, 50:12 (2016), 1579–1583
Linking options:
https://www.mathnet.ru/eng/phts6278 https://www.mathnet.ru/eng/phts/v50/i12/p1605
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