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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, I. N. Antonov, “Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer”, Fizika Tverdogo Tela, 63:3 (2021), 346–355   ; Phys. Solid State, 63:3 (2021), 425–434 |
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| 2. |
D. A. Antonov, D. O. Filatov, A. S. Novikov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveyshchev, O. N. Gorshkov, “Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1474–1478 |
| 3. |
D. O. Filatov, M. E. Shenina, I. A. Rozhentsov, M. N. Koryazhkina, A. S. Novikov, I. N. Antonov, A. V. Ershov, A. P. Gorshkov, O. N. Gorshkov, “Effect of optical illumination on resistive switching in MOS stacks based on ZrO$_2$(Y) films with Au nanoparticles”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 754–757 ; Semiconductors, 55:9 (2021), 731–734 |
| 4. |
V. A. Vorontsov, D. A. Antonov, A. V. Kruglov, I. N. Antonov, V. E. Kotomina, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, D. O. Filatov, O. N. Gorshkov, “Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 23–26 |
| 5. |
D. A. Antonov, A. S. Novikov, D. O. Filatov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveyshchev, O. N. Gorshkov, “The formation of nanosized ferromagnetic Ni filaments in films of ZrO$_2$(Y)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021), 30–32 ; Tech. Phys. Lett., 47:7 (2021), 539–541 |
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2020 |
| 6. |
D. O. Filatov, D. A. Antonov, I. N. Antonov, A. I. Belov, V. N. Baranova, M. E. Shenina, O. N. Gorshkov, “Resistive switching of memristors based on stabilized zirconia by complex signals”, Fizika Tverdogo Tela, 62:4 (2020), 556–561 ; Phys. Solid State, 62:4 (2020), 642–647 |
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| 7. |
D. O. Filatov, D. A. Antonov, I. N. Antonov, M. A. Ryabova, O. N. Gorshkov, “An atomic force microscopic study of resistive switching resonance activation in ZrO$_{2}$(Y) films”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1825–1829 ; Tech. Phys., 65:11 (2020), 1744–1747 |
| 8. |
S. V. Tikhov, V. G. Shengurov, S. A. Denisov, I. N. Antonov, A. V. Kruglov, A. I. Belov, D. O. Filatov, O. N. Gorshkov, A. N. Mikhaylov, “Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate”, Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020), 1741–1749 ; Tech. Phys., 65:10 (2020), 1668–1676 |
| 9. |
S. V. Tikhov, A. I. Belov, D. S. Korolev, I. N. Antonov, A. A. Sushkov, D. A. Pavlov, D. I. Tetelbaum, O. N. Gorshkov, A. N. Mikhaylov, “Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide”, Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 298–304 ; Tech. Phys., 65:2 (2020), 284–290 |
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| 10. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, I. N. Antonov, “Pulsed laser irradiation of GaAs-based light-emitting structures”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1336–1343 ; Semiconductors, 54:12 (2020), 1598–1604 |
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| 11. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, P. B. Demina, M. N. Drozdov, A. V. Zdoroveyshchev, R. N. Kriukov, A. V. Nezhdanov, I. N. Antonov, S. M. Plankina, M. P. Temiryazeva, “Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 801–806 ; Semiconductors, 54:8 (2020), 956–960 |
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| 12. |
O. N. Gorshkov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, I. N. Antonov, A. V. Kruglov, M. E. Shenina, V. E. Kotomina, D. O. Filatov, D. A. Serov, “Resistive switching in memristors based on Ag/Ge/Si heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 44–46 ; Tech. Phys. Lett., 46:1 (2020), 91–93 |
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2019 |
| 13. |
D. O. Filatov, M. N. Koryazhkina, D. A. Antonov, I. N. Antonov, D. A. Liskin, M. A. Ryabova, O. N. Gorshkov, “Atomic-force microscopy of resistive nonstationary signal switching in ZrO$_{2}$(Y) films”, Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1669–1673 ; Tech. Phys., 64:11 (2019), 1579–1583 |
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| 14. |
S. V. Tikhov, O. N. Gorshkov, A. I. Belov, I. N. Antonov, A. I. Morozov, M. N. Koryazhkina, A. N. Mikhaylov, “Mechanisms of current transport and resistive switching in capacitors with yttria-stabilized hafnia layers”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 927–934 ; Tech. Phys., 64:6 (2019), 873–880 |
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| 15. |
E. V. Okulich, M. N. Koryazhkina, D. S. Korolev, A. I. Belov, M. E. Shenina, A. N. Mikhaylov, D. I. Tetelbaum, I. N. Antonov, Yu. A. Dudin, “The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 3–6 ; Tech. Phys. Lett., 45:7 (2019), 690–693 |
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2018 |
| 16. |
Yu. A. Danilov, A. V. Kudrin, V. P. Lesnikov, O. V. Vikhrova, R. N. Kriukov, I. N. Antonov, D. S. Tolkachev, A. V. Alaferdov, Z. E. Kun'kova, M. P. Temiryazeva, A. G. Temiryazev, “The study of features of formation and properties of À$^{3}$Â$^{5}$ semiconductors highly doped with iron”, Fizika Tverdogo Tela, 60:11 (2018), 2137–2140 ; Phys. Solid State, 60:11 (2018), 2178–2181 |
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| 17. |
S. Yu. Zubkov, I. N. Antonov, O. N. Gorshkov, A. P. Kasatkin, R. N. Kriukov, D. E. Nikolichev, D. A. Pavlov, M. E. Shenina, “X-ray photoelectron spectroscopy of stabilized zirconia films with embedded Au nanoparticles formed under irradiation with gold ions”, Fizika Tverdogo Tela, 60:3 (2018), 591–595 ; Phys. Solid State, 60:3 (2018), 598–602 |
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| 18. |
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, D. I. Tetelbaum, A. N. Mikhaylov, A. I. Belov, A. I. Morozov, P. Karakolis, P. Dimitrakis, “Behavioral features of MIS memristors with a Si$_{3}$N$_{4}$ nanolayer fabricated on a conductive Si substrate”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1436–1442 ; Semiconductors, 52:12 (2018), 1540–1546 |
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| 19. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, I. N. Antonov, “The effect of the composition of a carrier gas during the growth of a Mn delta-layer on the electrical and magnetic properties of GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1286–1290 ; Semiconductors, 52:11 (2018), 1398–1402 |
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| 20. |
D. O. Filatov, I. N. Antonov, D. Yu. Sinutkin, D. A. Liskin, A. P. Gorshkov, O. N. Gorshkov, V. E. Kotomina, M. E. Shenina, S. V. Tikhov, I. S. Korotaeva, “Plasmon resonance induced photoconductivity in the yttria stabilized zirconia films with embedded Au nanoclusters”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 470 ; Semiconductors, 52:4 (2018), 465–467 |
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| 21. |
D. O. Filatov, V. V. Karzanov, I. N. Antonov, O. N. Gorshkov, “Features of switching memristor structures to a high-resistance state by sawtooth pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 88–93 ; Tech. Phys. Lett., 44:12 (2018), 1160–1162 |
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2017 |
| 22. |
A. V. Kudrin, Yu. A. Danilov, V. P. Lesnikov, O. V. Vikhrova, D. A. Pavlov, Yu. V. Usov, E. A. Pitirimova, I. N. Antonov, “Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature”, Fizika Tverdogo Tela, 59:11 (2017), 2200–2202 ; Phys. Solid State, 59:11 (2017), 2220–2222 |
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| 23. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, M. V. Dorokhin, D. A. Pavlov, I. N. Antonov, M. N. Drozdov, Yu. V. Usov, “Features of the selective manganese doping of GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1468–1472 ; Semiconductors, 51:11 (2017), 1415–1419 |
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2016 |
| 24. |
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, A. P. Kasatkin, D. S. Korolev, A. I. Belov, A. N. Mikhaylov, D. I. Tetelbaum, “Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$”, Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016), 107–111 ; Tech. Phys., 61:5 (2016), 745–749 |
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| 25. |
M. N. Koryazhkina, S. V. Tikhov, O. N. Gorshkov, A. P. Kasatkin, I. N. Antonov, “Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1639–1643 ; Semiconductors, 50:12 (2016), 1614–1618 |
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| 26. |
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vikhrova, A. I. Morozov, “Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1615–1619 ; Semiconductors, 50:12 (2016), 1589–1594 |
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| 27. |
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, A. P. Kasatkin, “Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 78–84 ; Tech. Phys. Lett., 42:5 (2016), 536–538 |
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| 28. |
A. I. Belov, A. N. Mikhaylov, D. S. Korolev, V. A. Sergeev, I. N. Antonov, O. N. Gorshkov, D. I. Tetelbaum, “Resistive switching in Au/SiO$_{x}$/TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 17–24 ; Tech. Phys. Lett., 42:5 (2016), 505–508 |
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| 29. |
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, A. P. Kasatkin, “Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016), 52–60 ; Tech. Phys. Lett., 42:2 (2016), 138–142 |
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| 30. |
O. N. Gorshkov, I. N. Antonov, D. O. Filatov, M. E. Shenina, A. P. Kasatkin, D. A. Pavlov, A. I. Bobrov, “Forming dense arrays of gold nanoparticles in thin films of yttria stabilized zirconia by magnetron sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016), 72–79 ; Tech. Phys. Lett., 42:1 (2016), 36–39 |
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2008 |
| 31. |
A. G. Lavkin, M. B. Mysenko, I. N. Antonov, “The Sine-Gordon brizer stochastic dissoziation in an external fields”, Izv. Sarat. Univ. Physics, 8:2 (2008), 34–39 |
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