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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 11, Pages 1669–1673
DOI: https://doi.org/10.21883/JTF.2019.11.48326.127-19 (Mi jtf5456) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXIII International Symposium on Nanophysics and Nanoelectronics, Nizhny Novgorod, March 11-14, 2019

Atomic-force microscopy of resistive nonstationary signal switching in ZrO$_{2}$(Y) films

D. O. Filatov, M. N. Koryazhkina, D. A. Antonov, I. N. Antonov, D. A. Liskin, M. A. Ryabova, O. N. Gorshkov

Lobachevsky State University of Nizhny Novgorod
Full-text PDF (152 kB) Citations (2)
DOI: https://doi.org/10.21883/JTF.2019.11.48326.127-19
Abstract: The features of resistive switching in the yttria stabilized zirconia films on the conductive substrates by triangle pulses with superimposed high-frequency sinusoidal signal has been studied using Conductive Atomic Force Microscopy. The improvement of the ratio of the values of the electric current through the contact of the probe to the surface of the dielectric film in the low resistant state and in the high resistant one as well as of the long-time scale stability of the values of the electric current through the contact in the respective states when applying the sinusoidal sighnal as compared to the switching by the triangle pulses has been observed. The effect was attributed to the resonant activation of the oxygen ion migration via the oxygen vacancies by the alternating external electric field.
Keywords: memristor, resistive switching, Atomic Force Microscopy, stability, resonant activation.
Funding agency Grant number
Russian Foundation for Basic Research 18-42-520059 р_а
This study was supported by the Russian Foundation for Basic Research and the administration of the Nizhny Novgorod oblast (project no. 18-42-520059r_a).
Received: 28.03.2019
Revised: 28.03.2019
Accepted: 15.04.2019
English version:
Technical Physics, 2019, Volume 64, Issue 11, Pages 1579–1583
DOI: https://doi.org/10.1134/S1063784219110082
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. O. Filatov, M. N. Koryazhkina, D. A. Antonov, I. N. Antonov, D. A. Liskin, M. A. Ryabova, O. N. Gorshkov, “Atomic-force microscopy of resistive nonstationary signal switching in ZrO$_{2}$(Y) films”, Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1669–1673; Tech. Phys., 64:11 (2019), 1579–1583
Citation in format AMSBIB
\Bibitem{FilKorAnt19}
\by D.~O.~Filatov, M.~N.~Koryazhkina, D.~A.~Antonov, I.~N.~Antonov, D.~A.~Liskin, M.~A.~Ryabova, O.~N.~Gorshkov
\paper Atomic-force microscopy of resistive nonstationary signal switching in ZrO$_{2}$(Y) films
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 11
\pages 1669--1673
\mathnet{http://mi.mathnet.ru/jtf5456}
\crossref{https://doi.org/10.21883/JTF.2019.11.48326.127-19}
\elib{https://elibrary.ru/item.asp?id=41300856}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 11
\pages 1579--1583
\crossref{https://doi.org/10.1134/S1063784219110082}
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