Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 10, Pages 78–84 (Mi pjtf6419)  

This article is cited in 18 scientific papers (total in 18 papers)

Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures

S. V. Tikhova, O. N. Gorshkovab, M. N. Koryazhkinaa, I. N. Antonovab, A. P. Kasatkina

a Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract: We have studied light-induced resistive switching in metal–insulator–semiconductor structures based on silicon covered with a tunneling-thin SiO$_2$ layer and nanometer-thick layer of antimony. The role of an insulator was played by yttria-stabilized zirconia.
Received: 03.09.2015
English version:
Technical Physics Letters, 2016, Volume 42, Issue 5, Pages 536–538
DOI: https://doi.org/10.1134/S1063785016050308
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, A. P. Kasatkin, “Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 78–84; Tech. Phys. Lett., 42:5 (2016), 536–538
Citation in format AMSBIB
\Bibitem{TikGorKor16}
\by S.~V.~Tikhov, O.~N.~Gorshkov, M.~N.~Koryazhkina, I.~N.~Antonov, A.~P.~Kasatkin
\paper Light-induced resistive switching in silicon-based metal--insulator--semiconductor structures
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 42
\issue 10
\pages 78--84
\mathnet{http://mi.mathnet.ru/pjtf6419}
\elib{https://elibrary.ru/item.asp?id=27368210}
\transl
\jour Tech. Phys. Lett.
\yr 2016
\vol 42
\issue 5
\pages 536--538
\crossref{https://doi.org/10.1134/S1063785016050308}
Linking options:
  • https://www.mathnet.ru/eng/pjtf6419
  • https://www.mathnet.ru/eng/pjtf/v42/i10/p78
  • This publication is cited in the following 18 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:42
    Full-text PDF :18
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024