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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 10, Pages 78–84
(Mi pjtf6419)
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This article is cited in 18 scientific papers (total in 18 papers)
Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures
S. V. Tikhova, O. N. Gorshkovab, M. N. Koryazhkinaa, I. N. Antonovab, A. P. Kasatkina a Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
We have studied light-induced resistive switching in metal–insulator–semiconductor structures based on silicon covered with a tunneling-thin SiO$_2$ layer and nanometer-thick layer of antimony. The role of an insulator was played by yttria-stabilized zirconia.
Received: 03.09.2015
Citation:
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, A. P. Kasatkin, “Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 78–84; Tech. Phys. Lett., 42:5 (2016), 536–538
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https://www.mathnet.ru/eng/pjtf6419 https://www.mathnet.ru/eng/pjtf/v42/i10/p78
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