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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 6, Pages 927–934
DOI: https://doi.org/10.21883/JTF.2019.06.47642.354-18 (Mi jtf5598) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Solid-State Electronics

Mechanisms of current transport and resistive switching in capacitors with yttria-stabilized hafnia layers

S. V. Tikhov, O. N. Gorshkov, A. I. Belov, I. N. Antonov, A. I. Morozov, M. N. Koryazhkina, A. N. Mikhaylov

Lobachevsky State University of Nizhny Novgorod
Full-text PDF (413 kB) Citations (4)
DOI: https://doi.org/10.21883/JTF.2019.06.47642.354-18
Abstract: The peculiarities of resistive switching in capacitors with yttria-stabilized hafnia layers were studied. The characteristics of current transport in the initial state and after electroforming and resistive switching at different temperatures were examined. The parameters of a small-signal equivalent circuit of a capacitor were determined for switching into low- and high-resistance states. These parameters suggest that the resistance of filaments changes after each successive switching. This provides an opportunity to use such measurements to determine the nature of resistive switching and verify the reproducibility of its parameters. The contribution of electron traps to switching was revealed. Ion migration polarization was observed at temperatures above 500 K, and the activation energy of ion migration and the ion concentration were determined. The effect of resistive switching under the influence of temperature was observed and interpreted for the first time.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 074-02-2018-330(2)
This study was supported by a grant from the Government of the Russian Federation for state support of scientific research supervised by leading scholars (contract no. 074-02-2018-330(2)).
Received: 04.10.2018
Revised: 04.10.2018
Accepted: 01.11.2018
English version:
Technical Physics, 2019, Volume 64, Issue 6, Pages 873–880
DOI: https://doi.org/10.1134/S1063784219060227
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Tikhov, O. N. Gorshkov, A. I. Belov, I. N. Antonov, A. I. Morozov, M. N. Koryazhkina, A. N. Mikhaylov, “Mechanisms of current transport and resistive switching in capacitors with yttria-stabilized hafnia layers”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 927–934; Tech. Phys., 64:6 (2019), 873–880
Citation in format AMSBIB
\Bibitem{TikGorBel19}
\by S.~V.~Tikhov, O.~N.~Gorshkov, A.~I.~Belov, I.~N.~Antonov, A.~I.~Morozov, M.~N.~Koryazhkina, A.~N.~Mikhaylov
\paper Mechanisms of current transport and resistive switching in capacitors with yttria-stabilized hafnia layers
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 6
\pages 927--934
\mathnet{http://mi.mathnet.ru/jtf5598}
\crossref{https://doi.org/10.21883/JTF.2019.06.47642.354-18}
\elib{https://elibrary.ru/item.asp?id=39133842}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 6
\pages 873--880
\crossref{https://doi.org/10.1134/S1063784219060227}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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