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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 14, Pages 3–6
DOI: https://doi.org/10.21883/PJTF.2019.14.48012.17807 (Mi pjtf5369) 		 
This article is cited in 2 scientific papers (total in 2 papers)

The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia

E. V. Okulich, M. N. Koryazhkina, D. S. Korolev, A. I. Belov, M. E. Shenina, A. N. Mikhaylov, D. I. Tetelbaum, I. N. Antonov, Yu. A. Dudin

National Research Lobachevsky State University of Nizhny Novgorod
Full-text PDF (310 kB) Citations (2)
DOI: https://doi.org/10.21883/PJTF.2019.14.48012.17807
Abstract: Resistive switching of memristive structures based on films of yttria stabilized zirconia (40 nm), irradiated with Si$^{+}$ ions with an energy of 6 keV and a dose of 5.4 $\times$ 10$^{15}$ cm$^{-2}$, was studied. It is established that ion irradiation leads to an increase in the stability of the parameters of resistive switching. This improvement is due to the fact that the diameter of the filaments as a result of irradiation is limited to the lateral size of the region of the individual cascades of displacement. Oxidation of such filaments in the process of resistive switching occurs more efficiently, which leads to an increase in resistance in a high resistance state.
Keywords: resistive switching, memristive structures, yttria-stabilized zirconia, ion irradiation.
Funding agency Grant number
Russian Foundation for Basic Research 18-37-00456
This work was supported by the Russian Foundation for Basic Research, project no. 18-37-00456.
Received: 26.03.2019
Revised: 11.04.2019
Accepted: 11.04.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 7, Pages 690–693
DOI: https://doi.org/10.1134/S1063785019070253
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. V. Okulich, M. N. Koryazhkina, D. S. Korolev, A. I. Belov, M. E. Shenina, A. N. Mikhaylov, D. I. Tetelbaum, I. N. Antonov, Yu. A. Dudin, “The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 3–6; Tech. Phys. Lett., 45:7 (2019), 690–693
Citation in format AMSBIB
\Bibitem{OkuKorKor19}
\by E.~V.~Okulich, M.~N.~Koryazhkina, D.~S.~Korolev, A.~I.~Belov, M.~E.~Shenina, A.~N.~Mikhaylov, D.~I.~Tetelbaum, I.~N.~Antonov, Yu.~A.~Dudin
\paper The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 14
\pages 3--6
\mathnet{http://mi.mathnet.ru/pjtf5369}
\crossref{https://doi.org/10.21883/PJTF.2019.14.48012.17807}
\elib{https://elibrary.ru/item.asp?id=41131121}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 7
\pages 690--693
\crossref{https://doi.org/10.1134/S1063785019070253}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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