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This article is cited in 13 scientific papers (total in 13 papers)
XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018
Behavioral features of MIS memristors with a Si$_{3}$N$_{4}$ nanolayer fabricated on a conductive Si substrate
S. V. Tikhova, O. N. Gorshkova, I. N. Antonova, D. I. Tetelbauma, A. N. Mikhaylova, A. I. Belova, A. I. Morozova, P. Karakolisbc, P. Dimitrakisb a Lobachevsky State University of Nizhny Novgorod
b Institute of Nanoscience and Nanotechnology, NCSR "Demokritos", Greece
c Department of Physics, University of Patras, Patras, Greece
Abstract:
The effect of the material of the metal plates (Au, Ta, W) and exposure to a high-power blue laser on the memristive characteristics of metal–insulator–semiconductor (MIS) capacitors with a Si$_{3}$N$_{4}$ film 6 nm thick fabricated on the basis of $n^+$-Si is studied. It is shown that bipolar switching by the current appears only in capacitors with Au. The causes of the absence of bipolar switching in capacitors with Ta and W are explained. The switching of capacitors with Ta by the current and light and the photomemory effect are detected. It is shown that, despite the high doping level of the semiconductor substrate, it decreases the MIS memristor response rate due to a high density of surface states localized at the Si$_{3}$N$_{4}$ interface. However, illumination allows a significant increase in the response rate due to a decrease in the semiconductor resistivity. The surface state densities are determined. To improve the frequency characteristics of MIS memristors, it is necessary to achieve a low surface state density.
Keywords:
Metal Insulator Semiconductor (MIS), Bipolar Switching, SS Density, Schottky Effect, Memristor Structure.
Received: 25.04.2018 Accepted: 07.05.2018
Citation:
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, D. I. Tetelbaum, A. N. Mikhaylov, A. I. Belov, A. I. Morozov, P. Karakolis, P. Dimitrakis, “Behavioral features of MIS memristors with a Si$_{3}$N$_{4}$ nanolayer fabricated on a conductive Si substrate”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1436–1442; Semiconductors, 52:12 (2018), 1540–1546
Linking options:
https://www.mathnet.ru/eng/phts5656 https://www.mathnet.ru/eng/phts/v52/i12/p1436
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