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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 2, Pages 44–46
DOI: https://doi.org/10.21883/PJTF.2020.02.48953.18075 (Mi pjtf5215) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Resistive switching in memristors based on Ag/Ge/Si heterostructures

O. N. Gorshkov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, I. N. Antonov, A. V. Kruglov, M. E. Shenina, V. E. Kotomina, D. O. Filatov, D. A. Serov

National Research Lobachevsky State University of Nizhny Novgorod
Full-text PDF (132 kB) Citations (5)
DOI: https://doi.org/10.21883/PJTF.2020.02.48953.18075
Abstract: Ag/Ge/Si heterostructures with threading dislocations in Ge layer can exhibit resistive switching (RS) in two regimes: (i) bipolar and (ii) volatile unipolar. In both regimes, these structures possess stable states with the ratio of currents in the low-resistance state (LRS) and high-resistance state (HRS) within 1.5–2.7. The volatile unipolar switching can be determined by capturing charge carriers on deep levels related to misfit dislocations at the Ge/Si interface, whereas the bipolar switching is related to the drift of Ag$^+$ ions via threading dislocations.
Keywords: Ge films, memristor, resistive switching, dislocation, semiconductor.
Funding agency Grant number
Russian Foundation for Basic Research 19-29-03026
This study was supported in part by the Russian Foundation for Basic Research, project no. 19-29-03026).
Received: 14.10.2019
Revised: 14.10.2019
Accepted: 24.10.2019
English version:
Technical Physics Letters, 2020, Volume 46, Issue 1, Pages 91–93
DOI: https://doi.org/10.1134/S106378502001023X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. N. Gorshkov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, I. N. Antonov, A. V. Kruglov, M. E. Shenina, V. E. Kotomina, D. O. Filatov, D. A. Serov, “Resistive switching in memristors based on Ag/Ge/Si heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 44–46; Tech. Phys. Lett., 46:1 (2020), 91–93
Citation in format AMSBIB
\Bibitem{GorSheDen20}
\by O.~N.~Gorshkov, V.~G.~Shengurov, S.~A.~Denisov, V.~Yu.~Chalkov, I.~N.~Antonov, A.~V.~Kruglov, M.~E.~Shenina, V.~E.~Kotomina, D.~O.~Filatov, D.~A.~Serov
\paper Resistive switching in memristors based on Ag/Ge/Si heterostructures
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 2
\pages 44--46
\mathnet{http://mi.mathnet.ru/pjtf5215}
\crossref{https://doi.org/10.21883/PJTF.2020.02.48953.18075}
\elib{https://elibrary.ru/item.asp?id=42776867}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 1
\pages 91--93
\crossref{https://doi.org/10.1134/S106378502001023X}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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