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This article is cited in 5 scientific papers (total in 5 papers)
Resistive switching in memristors based on Ag/Ge/Si heterostructures
O. N. Gorshkov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, I. N. Antonov, A. V. Kruglov, M. E. Shenina, V. E. Kotomina, D. O. Filatov, D. A. Serov National Research Lobachevsky State University of Nizhny Novgorod
Abstract:
Ag/Ge/Si heterostructures with threading dislocations in Ge layer can exhibit resistive switching (RS) in two regimes: (i) bipolar and (ii) volatile unipolar. In both regimes, these structures possess stable states with the ratio of currents in the low-resistance state (LRS) and high-resistance state (HRS) within 1.5–2.7. The volatile unipolar switching can be determined by capturing charge carriers on deep levels related to misfit dislocations at the Ge/Si interface, whereas the bipolar switching is related to the drift of Ag$^+$ ions via threading dislocations.
Keywords:
Ge films, memristor, resistive switching, dislocation, semiconductor.
Received: 14.10.2019 Revised: 14.10.2019 Accepted: 24.10.2019
Citation:
O. N. Gorshkov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, I. N. Antonov, A. V. Kruglov, M. E. Shenina, V. E. Kotomina, D. O. Filatov, D. A. Serov, “Resistive switching in memristors based on Ag/Ge/Si heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 44–46; Tech. Phys. Lett., 46:1 (2020), 91–93
Linking options:
https://www.mathnet.ru/eng/pjtf5215 https://www.mathnet.ru/eng/pjtf/v46/i2/p44
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