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Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 90, Issue 2, Pages 298–304
DOI: https://doi.org/10.21883/JTF.2020.02.48824.211-19 (Mi jtf5391) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Physics of nanostructures

Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide

S. V. Tikhov, A. I. Belov, D. S. Korolev, I. N. Antonov, A. A. Sushkov, D. A. Pavlov, D. I. Tetelbaum, O. N. Gorshkov, A. N. Mikhaylov

Lobachevsky State University of Nizhny Novgorod
Full-text PDF (737 kB) Citations (4)
DOI: https://doi.org/10.21883/JTF.2020.02.48824.211-19
Abstract: The electrophysical characteristics of a multilayer memristive Au/Ta/ZrO$_{2}$(Y)/TaO$_{x}$/TiN structure have been studied. Electron and ion electret effects due to charge carrier trapping and ion migration polarization in the dielectric have been discovered. The influence of traps on electroforming processes and resistive switching has been established. The values of activation energy and ion and trap concentrations have been determined. The effect of resistive switching stabilization has been found, which is associated with the specific bilayer structure of TaO$_x$ and self-forming tantalum nanoclusters. The nanoclusters serve as electric field concentrators in the course of electroforming and subsequent resistive switching.
Keywords: memristor, resistive switching, traps, ions, migration polarization, nanoclusters.
Funding agency Grant number
Russian Foundation for Basic Research 18-29-23001
This study was financially supported by the Russian Foundation for Basic Research, grant no. 18-29-23001.
Received: 21.05.2019
Revised: 21.05.2019
Accepted: 10.06.2019
English version:
Technical Physics, 2020, Volume 65, Issue 2, Pages 284–290
DOI: https://doi.org/10.1134/S1063784220020231
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Tikhov, A. I. Belov, D. S. Korolev, I. N. Antonov, A. A. Sushkov, D. A. Pavlov, D. I. Tetelbaum, O. N. Gorshkov, A. N. Mikhaylov, “Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide”, Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 298–304; Tech. Phys., 65:2 (2020), 284–290
Citation in format AMSBIB
\Bibitem{TikBelKor20}
\by S.~V.~Tikhov, A.~I.~Belov, D.~S.~Korolev, I.~N.~Antonov, A.~A.~Sushkov, D.~A.~Pavlov, D.~I.~Tetelbaum, O.~N.~Gorshkov, A.~N.~Mikhaylov
\paper Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 90
\issue 2
\pages 298--304
\mathnet{http://mi.mathnet.ru/jtf5391}
\crossref{https://doi.org/10.21883/JTF.2020.02.48824.211-19}
\elib{https://elibrary.ru/item.asp?id=42745579}
\transl
\jour Tech. Phys.
\yr 2020
\vol 65
\issue 2
\pages 284--290
\crossref{https://doi.org/10.1134/S1063784220020231}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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