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Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 86, Issue 5, Pages 107–111
(Mi jtf6559)
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This article is cited in 16 scientific papers (total in 16 papers)
Physics of nanostructures
Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, A. P. Kasatkin, D. S. Korolev, A. I. Belov, A. N. Mikhaylov, D. I. Tetelbaum Lobachevsky State University of Nizhny Novgorod
Abstract:
The change of the immitance of the metal–insulator–metal memristive structures based on SiO$_{x}$, which is observed during electroforming and resistive switching, confirms the formation of conducting channels (filaments) in the insulator during forming and their rupture upon a transition of the structure to a highresistance state. The observed switching of the differential capacitance and conductivity synchronously with the switching of current (resistance) can substantially extend the functional applications of memristive devices of this type.
Received: 17.03.2015
Citation:
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, A. P. Kasatkin, D. S. Korolev, A. I. Belov, A. N. Mikhaylov, D. I. Tetelbaum, “Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$”, Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016), 107–111; Tech. Phys., 61:5 (2016), 745–749
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https://www.mathnet.ru/eng/jtf6559 https://www.mathnet.ru/eng/jtf/v86/i5/p107
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Abstract page: | 35 | Full-text PDF : | 10 |
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