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This article is cited in 1 scientific paper (total in 1 paper)
The formation of nanosized ferromagnetic Ni filaments in films of ZrO$_2$(Y)
D. A. Antonov, A. S. Novikov, D. O. Filatov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveyshchev, O. N. Gorshkov Lobachevsky State University of Nizhny Novgorod
Abstract:
Conducting ferromagnetic nanosized filaments consisting of Ni atoms are formed in thin ZrO$_2$(Y)/Ni films using an atomic force microscope probe. The contact of the probe to such films (a virtual composite memristor device) exhibits resistive switching of the bipolar type associated with the destruction and restoration of Ni filaments in the ZrO$_2$(Y) film. The region in which the conductive filament emerges onto the surface of the ZrO$_2$(Y) film manifests itself in the magnetic force image as a single-domain ferromagnetic particle.
Keywords:
memristor, resistive switching, atomic force microscopy, ferromagnetic filaments.
Received: 21.12.2020 Revised: 07.03.2021 Accepted: 09.03.2021
Citation:
D. A. Antonov, A. S. Novikov, D. O. Filatov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveyshchev, O. N. Gorshkov, “The formation of nanosized ferromagnetic Ni filaments in films of ZrO$_2$(Y)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021), 30–32; Tech. Phys. Lett., 47:7 (2021), 539–541
Linking options:
https://www.mathnet.ru/eng/pjtf4773 https://www.mathnet.ru/eng/pjtf/v47/i11/p30
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