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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 3, Pages 52–60 (Mi pjtf6518)  
This article is cited in 2 scientific papers (total in 2 papers)

Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures

S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, A. P. Kasatkin

Lobachevsky State University of Nizhny Novgorod
Full-text PDF (386 kB) Citations (2)
Abstract: Specific features (abrupt changes in current caused by voltage variation) of nonequilibrium depletion in metal–insulator–semiconductor structures based on gallium arsenide and silicon with a 40-nm-thick film of yttria-stabilized zirconia were revealed. These features may help extend the range of application of the nonequilibrium depletion effect in microelectronics.
Keywords: GaAs, Technical Physic Letter, Sweep Rate, Gallium Arsenide, Resistive Switching.
Received: 31.03.2015
English version:
Technical Physics Letters, 2016, Volume 42, Issue 2, Pages 138–142
DOI: https://doi.org/10.1134/S1063785016020139
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, A. P. Kasatkin, “Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016), 52–60; Tech. Phys. Lett., 42:2 (2016), 138–142
Citation in format AMSBIB
\Bibitem{TikGorKor16}
\by S.~V.~Tikhov, O.~N.~Gorshkov, M.~N.~Koryazhkina, I.~N.~Antonov, A.~P.~Kasatkin
\paper Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal--insulator--semiconductor structures
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 42
\issue 3
\pages 52--60
\mathnet{http://mi.mathnet.ru/pjtf6518}
\elib{https://elibrary.ru/item.asp?id=25669704}
\transl
\jour Tech. Phys. Lett.
\yr 2016
\vol 42
\issue 2
\pages 138--142
\crossref{https://doi.org/10.1134/S1063785016020139}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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