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Fizika Tverdogo Tela, 2020, Volume 62, Issue 4, Pages 556–561
DOI: https://doi.org/10.21883/FTT.2020.04.49120.620 (Mi ftt8447) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Dielectrics

Resistive switching of memristors based on stabilized zirconia by complex signals

D. O. Filatov, D. A. Antonov, I. N. Antonov, A. I. Belov, V. N. Baranova, M. E. Shenina, O. N. Gorshkov

National Research Lobachevsky State University of Nizhny Novgorod
Full-text PDF (176 kB) Citations (3)
DOI: https://doi.org/10.21883/FTT.2020.04.49120.620
Abstract: The specific features of resistive switching, which was initiated by triangular pulses with a high-frequency sine signal imposed on them, in experimental memristor prototypes based on thin films of yttria-stabilized zirconia were examined. It was found that memristors switched by these complex signals have lower switching voltage, higher ratio of currents in low- and high-resistance states, and better long-term current stability than memristors switched by triangular pulses without the sine signal. This improvement of switching parameters is associated with resonance activation of migration of oxygen ions via vacancies in the alternating external electric field.
Keywords: memristor, resistive switching, stabilized zirconia, resonance activation.
Funding agency Grant number
Russian Foundation for Basic Research 18-42-520059 р_а
This study was supported financially by the Russian Foundation for Basic Research and the Government of the Nizhny Novgorod oblast (project no. 18-42-520059 r_a).
Received: 31.10.2019
Revised: 31.10.2019
Accepted: 19.10.2019
English version:
Physics of the Solid State, 2020, Volume 62, Issue 4, Pages 642–647
DOI: https://doi.org/10.1134/S1063783420040083
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. O. Filatov, D. A. Antonov, I. N. Antonov, A. I. Belov, V. N. Baranova, M. E. Shenina, O. N. Gorshkov, “Resistive switching of memristors based on stabilized zirconia by complex signals”, Fizika Tverdogo Tela, 62:4 (2020), 556–561; Phys. Solid State, 62:4 (2020), 642–647
Citation in format AMSBIB
\Bibitem{FilAntAnt20}
\by D.~O.~Filatov, D.~A.~Antonov, I.~N.~Antonov, A.~I.~Belov, V.~N.~Baranova, M.~E.~Shenina, O.~N.~Gorshkov
\paper Resistive switching of memristors based on stabilized zirconia by complex signals
\jour Fizika Tverdogo Tela
\yr 2020
\vol 62
\issue 4
\pages 556--561
\mathnet{http://mi.mathnet.ru/ftt8447}
\crossref{https://doi.org/10.21883/FTT.2020.04.49120.620}
\elib{https://elibrary.ru/item.asp?id=42776780}
\transl
\jour Phys. Solid State
\yr 2020
\vol 62
\issue 4
\pages 642--647
\crossref{https://doi.org/10.1134/S1063783420040083}
Linking options:
  • https://www.mathnet.ru/eng/ftt8447
  • https://www.mathnet.ru/eng/ftt/v62/i4/p556
    • This publication is cited in the following 3 articles:
    1. M A Ryabova, D O Filatov, M E Shenina, M N Koryazhkina, I N Antonov, V N Baranova, O N Gorshkov, “Resonant Activation of Resistance Switching in Memristors Based on YSZ Films with Au Nanoparticles”, J. Phys.: Conf. Ser., 2227:1 (2022), 012020  crossref
    2. V N Baranova, D O Filatov, D A Antonov, I N Antonov, O N Gorshkov, “Resonant activation of resistive switching in ZrO2(Y) based memristors”, J. Phys.: Conf. Ser., 1695:1 (2020), 012151  crossref
    3. V. N. Baranova, D. O. Filatov, D. A. Antonov, I. N. Antonov, O. N. Gorshkov, “Resonant Activation of Resistive Switching in ZrO2(Y) Based Memristors”, Semiconductors, 54:14 (2020), 1830  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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