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This article is cited in 3 scientific papers (total in 3 papers)
Dielectrics
Resistive switching of memristors based on stabilized zirconia by complex signals
D. O. Filatov, D. A. Antonov, I. N. Antonov, A. I. Belov, V. N. Baranova, M. E. Shenina, O. N. Gorshkov National Research Lobachevsky State University of Nizhny Novgorod
Abstract:
The specific features of resistive switching, which was initiated by triangular pulses with a high-frequency sine signal imposed on them, in experimental memristor prototypes based on thin films of yttria-stabilized zirconia were examined. It was found that memristors switched by these complex signals have lower switching voltage, higher ratio of currents in low- and high-resistance states, and better long-term current stability than memristors switched by triangular pulses without the sine signal. This improvement of switching parameters is associated with resonance activation of migration of oxygen ions via vacancies in the alternating external electric field.
Keywords:
memristor, resistive switching, stabilized zirconia, resonance activation.
Received: 31.10.2019 Revised: 31.10.2019 Accepted: 19.10.2019
Citation:
D. O. Filatov, D. A. Antonov, I. N. Antonov, A. I. Belov, V. N. Baranova, M. E. Shenina, O. N. Gorshkov, “Resistive switching of memristors based on stabilized zirconia by complex signals”, Fizika Tverdogo Tela, 62:4 (2020), 556–561; Phys. Solid State, 62:4 (2020), 642–647
Linking options:
https://www.mathnet.ru/eng/ftt8447 https://www.mathnet.ru/eng/ftt/v62/i4/p556
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