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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
F. I. Zubov, Yu. M. Shernyakov, N. Yu. Gordeev, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, A. E. Zhukov, “Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots”, Kvantovaya Elektronika, 52:7 (2022), 593–596  |
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2021 |
| 2. |
A. V. Malevskaya, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, D. A. Malevskii, M. V. Nakhimovich, V. R. Larionov, P. V. Pokrovskii, M. Z. Shvarts, V. M. Andreev, “High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1218–1222  |
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| 3. |
A. V. Malevskaya, N. D. Il'inskaya, N. A. Kalyuzhnyy, D. A. Malevskii, Yu. M. Zadiranov, P. V. Pokrovskii, A. A. Blokhin, A. V. Andreeva, “Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1086–1090 |
| 4. |
A. V. Malevskaya, N. A. Kalyuzhnyy, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, M. V. Nakhimovich, F. Yu. Soldatenkov, M. Z. Shvarts, V. M. Andreev, “Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 699–703 ; Semiconductors, 55:8 (2021), 686–690 |
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| 5. |
A. V. Malevskaya, N. A. Kalyuzhnyy, D. A. Malevskii, S. A. Mintairov, R. A. Salii, A. N. Panchak, P. V. Pokrovskii, N. S. Potapovich, V. M. Andreev, “Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 614–617 ; Semiconductors, 55:8 (2021), 686–690 |
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| 6. |
Yu. M. Shernyakov, N. Yu. Gordeev, A. S. Payusov, A. A. Serin, G. O. Kornyshov, A. M. Nadtochiy, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, A. E. Zhukov, “Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 256–263 ; Semiconductors, 55:3 (2021), 333–340 |
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| 7. |
R. A. Salii, M. A. Mintairov, S. A. Mintairov, M. V. Nakhimovich, M. Z. Shvarts, N. A. Kalyuzhnyy, “Investigation of the photoelectric characteristics of GaAs solar cells with different InGaAs quantum dot array positioning in the $i$-region”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 28–31 |
| 8. |
F. I. Zubov, M. V. Maksimov, N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, S. A. Blokhin, A. A. Vorob'ev, A. M. Mozharov, S. A. Mintairov, N. A. Kalyuzhnyy, A. E. Zhukov, “Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 3–6 |
| 9. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts, N. A. Kalyuzhnyy, “Increasing the efficiency of triple-junction solar cells due to the metamorphic InGaAs subcell”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 51–54 |
| 10. |
A. V. Uvarov, A. I. Baranov, E. A. Vyacheslavova, N. A. Kalyuzhnyy, D. A. Kudriashov, A. A. Maksimova, I. A. Morozov, S. A. Mintairov, R. A. Salii, A. S. Gudovskikh, “Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 51–54 ; Tech. Phys. Lett., 47:10 (2021), 730–733 |
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| 11. |
A. E. Zhukov, È. I. Moiseev, A. M. Nadtochiy, A. S. Dragunova, N. V. Kryzhanovskaya, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, F. I. Zubov, M. V. Maksimov, “Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 28–31 ; Tech. Phys. Lett., 47:9 (2021), 685–688 |
| 12. |
S. A. Mintairov, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts, N. A. Kalyuzhnyy, “Increasing the efficiency of 520- to 540-nm laser radiation photovoltaic converters based on GaInP/GaAs heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 29–31 ; Tech. Phys. Lett., 47:4 (2021), 290–292 |
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2020 |
| 13. |
V. P. Khvostikov, N. A. Kalyuzhnyy, S. A. Mintairov, N. S. Potapovich, O. A. Khvostikova, S. V. Sorokina, M. Z. Shvarts, “Laser power converter modules with a wavelength of 809–850 nm”, Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020), 1764–1768 ; Tech. Phys., 65:10 (2020), 1690–1694 |
| 14. |
R. A. Salii, S. A. Mintairov, A. M. Nadtochiy, V. N. Nevedomskiy, M. Z. Shvarts, N. A. Kalyuzhnyy, “Comparative analysis of the optical and physical properties of inas and InAs, In$_{0.8}$Ga$_{0.2}$As quantum dots and solar cells based on them”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1079–1087 ; Semiconductors, 54:10 (2020), 1267–1275 |
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| 15. |
A. E. Zhukov, N. V. Kryzhanovskaya, È. I. Moiseev, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maksimov, “Ultimate lasing temperature of microdisk lasers”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 570–574 ; Semiconductors, 54:6 (2020), 677–681 |
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| 16. |
V. M. Emelyanov, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts, “Effects of doping of bragg reflector layers on the electrical characteristics of InGaAs/GaAs metamorphic photovoltaic converters”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 400–407 ; Semiconductors, 54:4 (2020), 476–483 |
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| 17. |
S. A. Mintairov, I. M. Gadzhiev, N. A. Kalyuzhnyy, M. V. Maksimov, A. M. Nadtochiy, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts, A. E. Zhukov, “High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 11–14 ; Tech. Phys. Lett., 46:12 (2020), 1219–1222 |
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| 18. |
N. V. Kryzhanovskaya, È. I. Moiseev, A. M. Nadtochiy, A. A. Kharchenko, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, A. E. Zhukov, “A micro optocoupler based on a microdisk laser and a photodetector with an active region based on quantum well-dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020), 7–10 ; Tech. Phys. Lett., 46:7 (2020), 629–632 |
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| 19. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, A. M. Nadtochiy, R. A. Salii, M. Z. Shvarts, N. A. Kalyuzhnyy, “The influence of the number of rows of GaInAs quantum objects on the saturation current of GaAs photoconverters”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:12 (2020), 30–33 ; Tech. Phys. Lett., 46:6 (2020), 599–602 |
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| 20. |
A. E. Zhukov, È. I. Moiseev, A. M. Nadtochiy, N. V. Kryzhanovskaya, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, F. I. Zubov, M. V. Maksimov, “The effect of self-heating on the modulation characteristics of a microdisk laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 3–7 ; Tech. Phys. Lett., 46:6 (2020), 515–519 |
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| 21. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. Z. Shvarts, N. A. Kalyuzhnyy, “Finding the energy gap of Ga$_{1-x}$In$_{x}$As $p$–$n$ junctions on a metamorphic buffer from the photocurrent spectrum”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020), 29–31 ; Tech. Phys. Lett., 46:4 (2020), 332–334 |
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| 22. |
S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, A. M. Nadtochiy, A. A. Kharchenko, M. Z. Shvarts, A. E. Zhukov, “Experimental and theoretical examination of the photosensitivity spectra of structures with In$_{0.4}$Ga$_{0.6}$As quantum well-dots of the optical range (900–1050 nm)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020), 3–6 ; Tech. Phys. Lett., 46:3 (2020), 203–206 |
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2019 |
| 23. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. Z. Shvarts, N. A. Kalyuzhnyy, “Counteracting the photovoltaic effect in the top intergenerator part of GaInP/GaAs/Ge solar cells”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1568–1572 ; Semiconductors, 53:11 (2019), 1535–1539 |
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| 24. |
A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, D. A. Sannikov, T. F. Yagafarov, A. E. Zhukov, “Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1520–1526 ; Semiconductors, 53:11 (2019), 1489–1495 |
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| 25. |
V. P. Khvostikov, N. A. Kalyuzhnyy, S. A. Mintairov, N. S. Potapovich, S. V. Sorokina, M. Z. Shvarts, “Module of laser-radiation ($\lambda$ = 1064 nm) photovoltaic converters”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1135–1139 ; Semiconductors, 53:8 (2019), 1110–1113 |
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| 26. |
A. E. Zhukov, È. I. Moiseev, N. V. Kryzhanovskaya, S. A. Blokhin, M. M. Kulagina, Yu. A. Guseva, S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Mozharov, F. I. Zubov, M. V. Maksimov, “Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1122–1127 ; Semiconductors, 53:8 (2019), 1099–1103 |
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| 27. |
S. A. Mintairov, V. M. Emelyanov, N. A. Kalyuzhnyy, M. Z. Shvarts, V. M. Andreev, “Increasing the photocurrent of a Ga(In)As subcell in multijunction solar cells based on GaInP/Ga(In)As/Ge heterostructure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019), 41–43 ; Tech. Phys. Lett., 45:12 (2019), 1258–1261 |
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| 28. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. Z. Shvarts, N. A. Kalyuzhnyy, “Anomalies in photovoltaic characteristics of multijunction solar cells at ultrahigh solar light concentrations”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 37–39 ; Tech. Phys. Lett., 45:11 (2019), 1100–1102 |
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| 29. |
F. I. Zubov, È. I. Moiseev, G. O. Kornyshov, N. V. Kryzhanovskaya, Yu. M. Shernyakov, A. S. Payusov, M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Maksimov, A. E. Zhukov, “Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019), 37–39 ; Tech. Phys. Lett., 45:10 (2019), 994–996 |
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| 30. |
A. E. Zhukov, È. I. Moiseev, N. V. Kryzhanovskaya, F. I. Zubov, A. M. Mozharov, N. A. Kalyuzhnyy, S. A. Mintairov, M. M. Kulagina, S. A. Blokhin, M. V. Maksimov, “Energy consumption for high-frequency switching of a quantum-dot microdisk laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019), 49–51 ; Tech. Phys. Lett., 45:8 (2019), 847–849 |
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| 31. |
A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, Yu. M. Shernyakov, G. O. Kornyshov, A. A. Serin, A. S. Payusov, V. N. Nevedomskiy, N. Yu. Gordeev, M. V. Maksimov, A. E. Zhukov, “Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 42–45 ; Tech. Phys. Lett., 45:2 (2019), 163–166 |
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2018 |
| 32. |
A. E. Zhukov, N. Yu. Gordeev, Yu. M. Shernyakov, A. S. Payusov, A. A. Serin, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, “Reduction of internal loss and thermal resistance in diode lasers with coupled waveguides”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1351–1356 ; Semiconductors, 52:11 (2018), 1462–1467 |
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| 33. |
S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maksimov, V. N. Nevedomskiy, L. A. Sokura, S. S. Ruvimov, M. Z. Shvarts, A. E. Zhukov, “Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1131–1136 ; Semiconductors, 52:10 (2018), 1249–1254 |
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| 34. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, R. A. Salii, M. Z. Shvarts, N. A. Kalyuzhnyy, “Recombination in GaAs $p$-$i$-$n$ structures with InGaAs quantum-confined objects: modeling and regularities”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1126–1130 ; Semiconductors, 52:10 (2018), 1244–1248 |
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| 35. |
R. A. Salii, I. S. Kosarev, S. A. Mintairov, A. M. Nadtochiy, M. Z. Shvarts, N. A. Kalyuzhnyy, “In$_{0.8}$Ga$_{0.2}$As quantum dots for GaAs solar cells: metal-organic vapor-phase epitaxy growth peculiarities and properties”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 729–735 ; Semiconductors, 52:7 (2018), 870–876 |
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| 36. |
D. V. Lebedev, N. A. Kalyuzhnyy, S. A. Mintairov, K. G. Belyaev, M. V. Rakhlin, A. A. Toropov, P. N. Brunkov, A. S. Vlasov, J. Merz, S. Rouvimov, S. Oktyabrsky, M. Yakimov, I. V. Mukhin, A. V. Shelaev, V. A. Bykov, A. Yu. Romanova, P. A. Buryak, A. M. Mintairov, “Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 477 ; Semiconductors, 52:4 (2018), 497–501 |
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| 37. |
A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, S. S. Ruvimov, V. N. Nevedomskiy, M. V. Maksimov, A. E. Zhukov, “Bimodality in arrays of In$_{0.4}$Ga$_{0.6}$As hybrid quantum-confined heterostructures grown on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 57–62 ; Semiconductors, 52:1 (2018), 55–58 |
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| 38. |
S. A. Mintairov, V. M. Emelyanov, N. A. Kalyuzhnyy, V. M. Andreev, “An antireflection coating of a germanium subcell in GaInP/GaAs/Ge solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:22 (2018), 95–101 ; Tech. Phys. Lett., 44:11 (2018), 1042–1044 |
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| 39. |
V. M. Emelyanov, N. A. Kalyuzhnyy, S. A. Mintairov, M. Z. Shvarts, “Optical properties of InGaAs/InAlAs metamorphic nanoheterostructures for photovoltaic converters of laser and solar radiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018), 50–58 ; Tech. Phys. Lett., 44:10 (2018), 877–880 |
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| 40. |
A. E. Zhukov, N. Yu. Gordeev, Yu. M. Shernyakov, A. S. Payusov, A. A. Serin, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, “Power characteristics and temperature dependence of the angular beam divergence of lasers with a near-surface active region”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:15 (2018), 46–51 ; Tech. Phys. Lett., 44:8 (2018), 675–677 |
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2017 |
| 41. |
P. V. Seredin, A. S. Len'shin, Yu. Yu. Khudyakov, I. N. Arsent'ev, N. A. Kalyuzhnyy, S. A. Mintairov, D. N. Nikolaev, T. Prutskij, “Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P alloys on their structural and morphological properties”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1131–1137 ; Semiconductors, 51:8 (2017), 1087–1092 |
1
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| 42. |
S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maksimov, A. M. Nadtochiy, V. N. Nevedomskiy, A. E. Zhukov, “InAs QDs in a metamorphic In$_{0.25}$Ga$_{0.75}$As matrix, grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 704–710 ; Semiconductors, 51:5 (2017), 672–678 |
| 43. |
S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maksimov, S. S. Ruvimov, A. E. Zhukov, “Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 372–377 ; Semiconductors, 51:3 (2017), 357–362 |
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| 44. |
D. V. Rybalchenko, S. A. Mintairov, R. A. Salii, N. Kh. Timoshina, M. Z. Shvarts, N. A. Kalyuzhnyy, “Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 94–100 ; Semiconductors, 51:1 (2017), 93–99 |
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2016 |
| 45. |
V. P. Khvostikov, N. A. Kalyuzhnyy, S. A. Mintairov, S. V. Sorokina, N. S. Potapovich, V. M. Emelyanov, N. Kh. Timoshina, V. M. Andreev, “Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1242–1246 ; Semiconductors, 50:9 (2016), 1220–1224 |
42
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| 46. |
A. M. Nadtochiy, N. A. Kalyuzhnyy, S. A. Mintairov, A. S. Payusov, S. S. Rouvimov, M. V. Maksimov, A. E. Zhukov, “Optical properties of hybrid quantum-confined structures with high absorbance”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1202–1207 ; Semiconductors, 50:9 (2016), 1180–1185 |
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| 47. |
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, N. Kh. Timoshina, M. Z. Shvarts, N. A. Kalyuzhnyy, “On current spreading in solar cells: a two-parameter tube model”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 987–992 ; Semiconductors, 50:7 (2016), 970–975 |
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| 48. |
S. A. Mintairov, V. M. Emelyanov, D. V. Rybalchenko, R. A. Salii, N. Kh. Timoshina, M. Z. Shvarts, N. A. Kalyuzhnyy, “Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 525–530 ; Semiconductors, 50:4 (2016), 517–522 |
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