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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 4, Page 477 (Mi phts5873)  
This article is cited in 2 scientific papers (total in 2 papers)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Quantum wells, Quantum wires, Quantum dots, band structure

Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy

D. V. Lebedeva, N. A. Kalyuzhnyya, S. A. Mintairova, K. G. Belyaeva, M. V. Rakhlina, A. A. Toropova, P. N. Brunkovab, A. S. Vlasova, J. Merzc, S. Rouvimovc, S. Oktyabrskyd, M. Yakimovd, I. V. Mukhine, A. V. Shelaevf, V. A. Bykovf, A. Yu. Romanovab, P. A. Buryakb, A. M. Mintairovac

a Ioffe Institute, 194021 St. Petersburg, Russia
b St. Petersburg Polytechnical University, 195251 St. Petersburg, Russia
c University of Notre Dame, USA. IN 46556. Notre Dame
d Institute for Materials, State University of New York at Albany, USA. NY 12203. Albany.251 Fuller Rd.
e St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
f NT-MDT Spectrum Instruments, 124460 St. Petersburg, Russia
Full-text PDF (32 kB) Citations (2)
Abstract: We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100–200 nm, together with a bimodal height distribution having maxima at $\sim$5 and $\sim$15 nm, which we denoted as QDs of type $A$ and $B$, respectively; and reduction of the density of the type-$B$ dots from 4.4 to 1.6 $\mu$m$^{-2}$. The reduction of the density of $B$-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 14.Z50.31.0021
Russian Science Foundation 14-22-00107
A.M.M. and D.V.L. acknowledges support of the Ministry of Education and Science of the Russian Federation (contract 14.Z50.31.0021,7th April 2014) K.G.B., M.V.R. and A.A.T. gratefully acknowledge the financial support of the Russian Science Foundation (project 14-22-00107).
English version:
Semiconductors, 2018, Volume 52, Issue 4, Pages 497–501
DOI: https://doi.org/10.1134/S1063782618040206
Bibliographic databases:
Document Type: Article
Language: English
Citation: D. V. Lebedev, N. A. Kalyuzhnyy, S. A. Mintairov, K. G. Belyaev, M. V. Rakhlin, A. A. Toropov, P. N. Brunkov, A. S. Vlasov, J. Merz, S. Rouvimov, S. Oktyabrsky, M. Yakimov, I. V. Mukhin, A. V. Shelaev, V. A. Bykov, A. Yu. Romanova, P. A. Buryak, A. M. Mintairov, “Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 477; Semiconductors, 52:4 (2018), 497–501
Citation in format AMSBIB
\Bibitem{LebKalMin18}
\by D.~V.~Lebedev, N.~A.~Kalyuzhnyy, S.~A.~Mintairov, K.~G.~Belyaev, M.~V.~Rakhlin, A.~A.~Toropov, P.~N.~Brunkov, A.~S.~Vlasov, J.~Merz, S.~Rouvimov, S.~Oktyabrsky, M.~Yakimov, I.~V.~Mukhin, A.~V.~Shelaev, V.~A.~Bykov, A.~Yu.~Romanova, P.~A.~Buryak, A.~M.~Mintairov
\paper Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 4
\pages 477
\mathnet{http://mi.mathnet.ru/phts5873}
\elib{https://elibrary.ru/item.asp?id=32740472}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 4
\pages 497--501
\crossref{https://doi.org/10.1134/S1063782618040206}
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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