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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 14, Pages 51–54
DOI: https://doi.org/10.21883/PJTF.2021.14.51189.18781 (Mi pjtf4739) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD

A. V. Uvarovab, A. I. Baranovab, E. A. Vyacheslavovaab, N. A. Kalyuzhnyyc, D. A. Kudriashovab, A. A. Maksimovaab, I. A. Morozovab, S. A. Mintairovc, R. A. Saliic, A. S. Gudovskikhab

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c Ioffe Institute, St. Petersburg
Full-text PDF (113 kB) Citations (3)
DOI: https://doi.org/10.21883/PJTF.2021.14.51189.18781
Abstract: The possibility of creating a lower junction of multijunction A$_3$B$_5$/Si solar cells based on an $n$-GaP/$p$-Si heterostructure was shown, using a combination of plasma enhanced atomic-layer deposition (PEALD) and metal-organic vapor phase epitaxy (MOVPE) at a temperature $(T_s)$ not exceeding 650$^{\circ}$C. Photoelectric properties of structures grown at 650$^{\circ}$C, depends on the conditions of the PEALD process, in particular, the use of additional processing in Ar plasma.
Keywords: gallium phosphide, silicon, solar cell.
Funding agency Grant number
Russian Science Foundation 17-19-01482
This study was supported by the Russian Science Foundation, project no. 17-19-01482.
Received: 24.03.2021
Revised: 26.04.2021
Accepted: 27.04.2021
English version:
Technical Physics Letters, 2021, Volume 47, Issue 10, Pages 730–733
DOI: https://doi.org/10.1134/S1063785021070270
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Uvarov, A. I. Baranov, E. A. Vyacheslavova, N. A. Kalyuzhnyy, D. A. Kudriashov, A. A. Maksimova, I. A. Morozov, S. A. Mintairov, R. A. Salii, A. S. Gudovskikh, “Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 51–54; Tech. Phys. Lett., 47:10 (2021), 730–733
Citation in format AMSBIB
\Bibitem{UvaBarVya21}
\by A.~V.~Uvarov, A.~I.~Baranov, E.~A.~Vyacheslavova, N.~A.~Kalyuzhnyy, D.~A.~Kudriashov, A.~A.~Maksimova, I.~A.~Morozov, S.~A.~Mintairov, R.~A.~Salii, A.~S.~Gudovskikh
\paper Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 14
\pages 51--54
\mathnet{http://mi.mathnet.ru/pjtf4739}
\crossref{https://doi.org/10.21883/PJTF.2021.14.51189.18781}
\elib{https://elibrary.ru/item.asp?id=46333474}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 10
\pages 730--733
\crossref{https://doi.org/10.1134/S1063785021070270}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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