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This article is cited in 3 scientific papers (total in 3 papers)
Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD
A. V. Uvarovab, A. I. Baranovab, E. A. Vyacheslavovaab, N. A. Kalyuzhnyyc, D. A. Kudriashovab, A. A. Maksimovaab, I. A. Morozovab, S. A. Mintairovc, R. A. Saliic, A. S. Gudovskikhab a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c Ioffe Institute, St. Petersburg
Abstract:
The possibility of creating a lower junction of multijunction A$_3$B$_5$/Si solar cells based on an $n$-GaP/$p$-Si heterostructure was shown, using a combination of plasma enhanced atomic-layer deposition (PEALD) and metal-organic vapor phase epitaxy (MOVPE) at a temperature $(T_s)$ not exceeding 650$^{\circ}$C. Photoelectric properties of structures grown at 650$^{\circ}$C, depends on the conditions of the PEALD process, in particular, the use of additional processing in Ar plasma.
Keywords:
gallium phosphide, silicon, solar cell.
Received: 24.03.2021 Revised: 26.04.2021 Accepted: 27.04.2021
Citation:
A. V. Uvarov, A. I. Baranov, E. A. Vyacheslavova, N. A. Kalyuzhnyy, D. A. Kudriashov, A. A. Maksimova, I. A. Morozov, S. A. Mintairov, R. A. Salii, A. S. Gudovskikh, “Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 51–54; Tech. Phys. Lett., 47:10 (2021), 730–733
Linking options:
https://www.mathnet.ru/eng/pjtf4739 https://www.mathnet.ru/eng/pjtf/v47/i14/p51
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